Brand/Series |
IRF Series |
|
Capacitance, Input |
200 pF @ -25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
P |
|
Configuration |
Single |
|
Current, Drain |
-0.49 A |
|
Dimensions |
6.29 x 5 x 3.37 mm |
|
Gate Charge, Total |
8.7 nC |
|
Height |
0.133" (3.37mm) |
|
Length |
0.247" (6.29mm) |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
4 |
|
Package Type |
HVMDIP |
|
Polarization |
P-Channel |
|
Power Dissipation |
1.3 W |
|
Resistance, Drain to Source On |
1.2 Ω |
|
Temperature, Operating, Maximum |
+175 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +175 °C |
|
Time, Turn-Off Delay |
15 ns |
|
Time, Turn-On Delay |
10 ns |
|
Transconductance, Forward |
0.6 S |
|
Typical Gate Charge @ Vgs |
Maximum of 8.7 nC @ -10 V |
|
Voltage, Breakdown, Drain to Source |
-100 V |
|
Voltage, Drain to Source |
-100 V |
|
Voltage, Forward, Diode |
-5.5 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.197" (5mm) |
|
關(guān)鍵詞 |