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SKM400GA12E4 - 

IGBT; D-59; IGBT; 1200 V; 565 A; 1200 V; 5.5 V (Typ.); 70 ns (Typ.)

SEMIKRON SKM400GA12E4
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制造商產(chǎn)品編號:
SKM400GA12E4
倉庫庫存編號:
70098166
技術(shù)數(shù)據(jù)表:
View SKM400GA12E4 Datasheet Datasheet
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SKM400GA12E4產(chǎn)品概述

IGBT Module Transistors

SKM400GA12E4產(chǎn)品信息

  Brand/Series  IGBT Series  
  Capacitance, Gate  26 nF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  565 A  
  Current, Continuous Collector  616 A  
  Dimensions  106.4 x 61.4 x 36.5 mm  
  Energy Rating  64 mJ  
  Fall Time  75 ns  
  Height  1.437" (36.5mm)  
  Length  4.188" (106.4mm)  
  Mounting Type  Screw  
  Number of Pins  4  
  Operating and Storage Temperature  -40 to 150°C (Operating), -40 to 125°C (Storage)  
  Package Type  Semitrans4  
  Polarity  N-Channel  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.055 K/W  
  Speed, Switching  12 kHz  
  Switching Loss  31 mJ  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +175 °C  
  Time, Rise  70 ns  
  Transistor Type  IGBT  
  Type  SPT  
  Voltage, Breakdown, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Gate Threshold, Range  5.5 V  
  Voltage, Gate to Emitter  20 V  
  Voltage, Saturation, Collector to Emitter  1200 V  
  Width  2.417" (61.4mm)  
關(guān)鍵詞         

SKM400GA12E4相關(guān)搜索

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 26 nF  SEMIKRON Capacitance, Gate 26 nF  IGBT Transistor Modules Capacitance, Gate 26 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 26 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Single  SEMIKRON Configuration Single  IGBT Transistor Modules Configuration Single  SEMIKRON IGBT Transistor Modules Configuration Single   Current, Collector 565 A  SEMIKRON Current, Collector 565 A  IGBT Transistor Modules Current, Collector 565 A  SEMIKRON IGBT Transistor Modules Current, Collector 565 A   Current, Continuous Collector 616 A  SEMIKRON Current, Continuous Collector 616 A  IGBT Transistor Modules Current, Continuous Collector 616 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 616 A   Dimensions 106.4 x 61.4 x 36.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 36.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 36.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 36.5 mm   Energy Rating 64 mJ  SEMIKRON Energy Rating 64 mJ  IGBT Transistor Modules Energy Rating 64 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 64 mJ   Fall Time 75 ns  SEMIKRON Fall Time 75 ns  IGBT Transistor Modules Fall Time 75 ns  SEMIKRON IGBT Transistor Modules Fall Time 75 ns   Height 1.437" (36.5mm)  SEMIKRON Height 1.437" (36.5mm)  IGBT Transistor Modules Height 1.437" (36.5mm)  SEMIKRON IGBT Transistor Modules Height 1.437" (36.5mm)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 4  SEMIKRON Number of Pins 4  IGBT Transistor Modules Number of Pins 4  SEMIKRON IGBT Transistor Modules Number of Pins 4   Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  SEMIKRON Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)  SEMIKRON IGBT Transistor Modules Operating and Storage Temperature -40 to 150°C (Operating), -40 to 125°C (Storage)   Package Type Semitrans4  SEMIKRON Package Type Semitrans4  IGBT Transistor Modules Package Type Semitrans4  SEMIKRON IGBT Transistor Modules Package Type Semitrans4   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.055 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.055 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.055 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.055 K/W   Speed, Switching 12 kHz  SEMIKRON Speed, Switching 12 kHz  IGBT Transistor Modules Speed, Switching 12 kHz  SEMIKRON IGBT Transistor Modules Speed, Switching 12 kHz   Switching Loss 31 mJ  SEMIKRON Switching Loss 31 mJ  IGBT Transistor Modules Switching Loss 31 mJ  SEMIKRON IGBT Transistor Modules Switching Loss 31 mJ   Temperature, Operating, Maximum +175 °C  SEMIKRON Temperature, Operating, Maximum +175 °C  IGBT Transistor Modules Temperature, Operating, Maximum +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +175 °C  SEMIKRON Temperature, Operating, Range -40 to +175 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C   Time, Rise 70 ns  SEMIKRON Time, Rise 70 ns  IGBT Transistor Modules Time, Rise 70 ns  SEMIKRON IGBT Transistor Modules Time, Rise 70 ns   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type SPT  SEMIKRON Type SPT  IGBT Transistor Modules Type SPT  SEMIKRON IGBT Transistor Modules Type SPT   Voltage, Breakdown, Collector to Emitter 1200 V  SEMIKRON Voltage, Breakdown, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 1200 V   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate Threshold, Range 5.5 V  SEMIKRON Voltage, Gate Threshold, Range 5.5 V  IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V  SEMIKRON IGBT Transistor Modules Voltage, Gate Threshold, Range 5.5 V   Voltage, Gate to Emitter 20 V  SEMIKRON Voltage, Gate to Emitter 20 V  IGBT Transistor Modules Voltage, Gate to Emitter 20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter 20 V   Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON Voltage, Saturation, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1200 V   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
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