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SEMIX503GD126HDC - 

IGBT; 1200 V, 490 A @ 25 DegC; 480 A @ 80 DegC; 1.7 V @ 25 degC

SEMIKRON SEMIX503GD126HDC
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
SEMIX503GD126HDC
倉庫庫存編號:
70098210
技術數(shù)據(jù)表:
View SEMIX503GD126HDC Datasheet Datasheet
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由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

SEMIX503GD126HDC產(chǎn)品概述

IGBT Module Transistors

SEMIX503GD126HDC產(chǎn)品信息

  Brand/Series  IGBT Series  
  Capacitance, Gate  21.6 nF  
  Channel Type  N  
  Configuration  Array  
  Current, Collector  466 A  
  Current, Continuous Collector  466 A  
  Dimensions  149.5 x 163 x 17 mm  
  Energy Rating  72 mJ  
  Length  5.885" (149.5mm)  
  Mounting Type  Screw  
  Number of Pins  29  
  Package Type  SEMIX 33c  
  Polarity  N-Channel  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.08 K/W  
  Switching Loss  69 @ 125°C (Typ.)  
  Temperature, Operating, Minimum  -40 °C  
  Temperature, Operating, Range  -40 to +150 °C  
  Transistor Type  IGBT  
  Type  Trench  
  Voltage and Current Rating  1200 V, 490 A @ 25°C  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Collector to Emitter, Saturation  1.7 V  
  Voltage, Gate to Emitter  20 V  
  Voltage, Saturation, Collector to Emitter  1.7 V @ 25°C (Typ.)  
關鍵詞         

SEMIX503GD126HDC相關搜索

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 21.6 nF  SEMIKRON Capacitance, Gate 21.6 nF  IGBT Transistor Modules Capacitance, Gate 21.6 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 21.6 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Array  SEMIKRON Configuration Array  IGBT Transistor Modules Configuration Array  SEMIKRON IGBT Transistor Modules Configuration Array   Current, Collector 466 A  SEMIKRON Current, Collector 466 A  IGBT Transistor Modules Current, Collector 466 A  SEMIKRON IGBT Transistor Modules Current, Collector 466 A   Current, Continuous Collector 466 A  SEMIKRON Current, Continuous Collector 466 A  IGBT Transistor Modules Current, Continuous Collector 466 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 466 A   Dimensions 149.5 x 163 x 17 mm  SEMIKRON Dimensions 149.5 x 163 x 17 mm  IGBT Transistor Modules Dimensions 149.5 x 163 x 17 mm  SEMIKRON IGBT Transistor Modules Dimensions 149.5 x 163 x 17 mm   Energy Rating 72 mJ  SEMIKRON Energy Rating 72 mJ  IGBT Transistor Modules Energy Rating 72 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 72 mJ   Length 5.885" (149.5mm)  SEMIKRON Length 5.885" (149.5mm)  IGBT Transistor Modules Length 5.885" (149.5mm)  SEMIKRON IGBT Transistor Modules Length 5.885" (149.5mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 29  SEMIKRON Number of Pins 29  IGBT Transistor Modules Number of Pins 29  SEMIKRON IGBT Transistor Modules Number of Pins 29   Package Type SEMIX 33c  SEMIKRON Package Type SEMIX 33c  IGBT Transistor Modules Package Type SEMIX 33c  SEMIKRON IGBT Transistor Modules Package Type SEMIX 33c   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.08 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.08 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.08 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.08 K/W   Switching Loss 69 @ 125°C (Typ.)  SEMIKRON Switching Loss 69 @ 125°C (Typ.)  IGBT Transistor Modules Switching Loss 69 @ 125°C (Typ.)  SEMIKRON IGBT Transistor Modules Switching Loss 69 @ 125°C (Typ.)   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Trench  SEMIKRON Type Trench  IGBT Transistor Modules Type Trench  SEMIKRON IGBT Transistor Modules Type Trench   Voltage and Current Rating 1200 V, 490 A @ 25°C  SEMIKRON Voltage and Current Rating 1200 V, 490 A @ 25°C  IGBT Transistor Modules Voltage and Current Rating 1200 V, 490 A @ 25°C  SEMIKRON IGBT Transistor Modules Voltage and Current Rating 1200 V, 490 A @ 25°C   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Collector to Emitter, Saturation 1.7 V  SEMIKRON Voltage, Collector to Emitter, Saturation 1.7 V  IGBT Transistor Modules Voltage, Collector to Emitter, Saturation 1.7 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter, Saturation 1.7 V   Voltage, Gate to Emitter 20 V  SEMIKRON Voltage, Gate to Emitter 20 V  IGBT Transistor Modules Voltage, Gate to Emitter 20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter 20 V   Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)  SEMIKRON Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 1.7 V @ 25°C (Typ.)  
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