VT1045BP-M3/4W -

Semiconductor, Rectifier; Trench MOS Barrier Schottky, Single; 45V; 10A; TO-220AC

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Features:

Trench MOS Schottky Technology

Low Forward Voltage Drop, Low Power Losses

High Efficiency Operation

Solder Dip 275°C Max. 10 s, Per JESD 22-B106

Compliant to RoHS Directive 2011/65/EU

Halogen-Free According to IEC 61249-2-21 Definition
Applications:

For Use in Solar Cell Junction Box as a Bypass Diode for Protection, Using DC Forward Current without Reverse Bias

Brand/Series	VT Series
Configuration	Single
Current, Forward, Continuous	10 A
Current, On-State, Non-Repetitive Peak	100 A
Current, Peak	15000 μA
Current, Reverse	500 μA
Current, Surge	100 A
Dimensions	10.26 x 4.83 x 15.24 mm
Diode Type	Schottky
Height	0.6" (15.24mm)
Length	0.403" (10.26mm)
Mounting Type	Through Hole
Number of Pins	2
Package Type	ITO-220AC
Primary Type	Rectifier
Rectifier Type	Switching
Resistance, Thermal, Junction to Case	3 °C/W
Temperature, Junction, Maximum	+150 °C
Temperature, Junction, Minimum	–40 °C
Temperature, Operating	-40 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +150 °C
Voltage, Forward	0.64 V
Voltage, Repetitive Peak	45 V
Width	0.19" (4.83mm)
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