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TP0610K-T1-E3 - 

MOSFET; P-Ch; VDSS -60V; RDS(ON) 10 Ohms; ID -185mA; TO-236 (SOT-23); PD 350mW; -55degc

Siliconix / Vishay TP0610K-T1-E3
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
TP0610K-T1-E3
倉庫庫存編號:
70026028
技術(shù)數(shù)據(jù)表:
View TP0610K-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

TP0610K-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices
  • TP0610K-T1-E3產(chǎn)品信息

      Brand/Series  TP Series  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -115 mA  
      Dimensions  3.04 x 1.4 x 1.02 mm  
      Gate Charge, Total  1.7 nC  
      Length  0.119" (3.04mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-236  
      Polarization  P-Channel  
      Power Dissipation  350 W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  80 S  
      Typical Gate Charge @ Vgs  1.7 nC @ -15 V  
      Voltage, Breakdown, Drain to Source  -60 V  
      Voltage, Drain to Source  -60 V  
      Voltage, Forward, Diode  -1.4 V  
      Voltage, Gate to Source  ±20 V  
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    TP0610K-T1-E3相關(guān)搜索

    Brand/Series TP Series  Siliconix / Vishay Brand/Series TP Series  MOSFET Transistors Brand/Series TP Series  Siliconix / Vishay MOSFET Transistors Brand/Series TP Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -115 mA  Siliconix / Vishay Current, Drain -115 mA  MOSFET Transistors Current, Drain -115 mA  Siliconix / Vishay MOSFET Transistors Current, Drain -115 mA   Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay Dimensions 3.04 x 1.4 x 1.02 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm   Gate Charge, Total 1.7 nC  Siliconix / Vishay Gate Charge, Total 1.7 nC  MOSFET Transistors Gate Charge, Total 1.7 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 1.7 nC   Length 0.119" (3.04mm)  Siliconix / Vishay Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  Siliconix / Vishay MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Package Type TO-236  Siliconix / Vishay Package Type TO-236  MOSFET Transistors Package Type TO-236  Siliconix / Vishay MOSFET Transistors Package Type TO-236   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 350 W  Siliconix / Vishay Power Dissipation 350 W  MOSFET Transistors Power Dissipation 350 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 350 W   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-On Delay 20 ns  Siliconix / Vishay Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 80 S  Siliconix / Vishay Transconductance, Forward 80 S  MOSFET Transistors Transconductance, Forward 80 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 80 S   Typical Gate Charge @ Vgs 1.7 nC @ -15 V  Siliconix / Vishay Typical Gate Charge @ Vgs 1.7 nC @ -15 V  MOSFET Transistors Typical Gate Charge @ Vgs 1.7 nC @ -15 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 1.7 nC @ -15 V   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Siliconix / Vishay Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -1.4 V  Siliconix / Vishay Voltage, Forward, Diode -1.4 V  MOSFET Transistors Voltage, Forward, Diode -1.4 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.4 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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