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SUP40N25-60-E3 - 

MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 0.049Ohm; ID 40A; TO-220AB; PD 300W; VGS +/-30V

Siliconix / Vishay SUP40N25-60-E3
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制造商產(chǎn)品編號(hào):
SUP40N25-60-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026024
技術(shù)數(shù)據(jù)表:
View SUP40N25-60-E3 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SUP40N25-60-E3產(chǎn)品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices
  • SUP40N25-60-E3產(chǎn)品信息

      Application  Industrial  
      Brand/Series  SUP Series  
      Capacitance, Input  5000 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  40 A  
      Dimensions  10.51 x 4.65 x 15.49 mm  
      Fall Time  145 nS  
      Gate Charge, Total  95 nC  
      Height  0.61" (15.49mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  300 W  
      Resistance, Drain to Source On  0.163 Ω  
      Resistance, Thermal, Junction to Case  0.5 °C⁄W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  40 °C⁄W  
      Time, Turn-Off Delay  40 ns  
      Time, Turn-On Delay  22 ns  
      Transconductance, Forward  70 S  
      Typical Gate Charge @ Vgs  95 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  250 V  
      Voltage, Drain to Source  250 V  
      Voltage, Forward, Diode  1 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.183" (4.65mm)  
    關(guān)鍵詞         

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    SUP40N25-60-E3相關(guān)搜索

    Application Industrial  Siliconix / Vishay Application Industrial  MOSFET Transistors Application Industrial  Siliconix / Vishay MOSFET Transistors Application Industrial   Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Capacitance, Input 5000 pF @ 25 V  Siliconix / Vishay Capacitance, Input 5000 pF @ 25 V  MOSFET Transistors Capacitance, Input 5000 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 5000 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 40 A  Siliconix / Vishay Current, Drain 40 A  MOSFET Transistors Current, Drain 40 A  Siliconix / Vishay MOSFET Transistors Current, Drain 40 A   Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay Dimensions 10.51 x 4.65 x 15.49 mm  MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm   Fall Time 145 nS  Siliconix / Vishay Fall Time 145 nS  MOSFET Transistors Fall Time 145 nS  Siliconix / Vishay MOSFET Transistors Fall Time 145 nS   Gate Charge, Total 95 nC  Siliconix / Vishay Gate Charge, Total 95 nC  MOSFET Transistors Gate Charge, Total 95 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 95 nC   Height 0.61" (15.49mm)  Siliconix / Vishay Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  Siliconix / Vishay MOSFET Transistors Height 0.61" (15.49mm)   Mounting Type Through Hole  Siliconix / Vishay Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Siliconix / Vishay MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 300 W  Siliconix / Vishay Power Dissipation 300 W  MOSFET Transistors Power Dissipation 300 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 300 W   Resistance, Drain to Source On 0.163 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.163 Ω  MOSFET Transistors Resistance, Drain to Source On 0.163 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.163 Ω   Resistance, Thermal, Junction to Case 0.5 °C⁄W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.5 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.5 °C⁄W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.5 °C⁄W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 40 °C⁄W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W   Time, Turn-Off Delay 40 ns  Siliconix / Vishay Time, Turn-Off Delay 40 ns  MOSFET Transistors Time, Turn-Off Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 40 ns   Time, Turn-On Delay 22 ns  Siliconix / Vishay Time, Turn-On Delay 22 ns  MOSFET Transistors Time, Turn-On Delay 22 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 22 ns   Transconductance, Forward 70 S  Siliconix / Vishay Transconductance, Forward 70 S  MOSFET Transistors Transconductance, Forward 70 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 70 S   Typical Gate Charge @ Vgs 95 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 95 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 95 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 95 nC @ 10 V   Voltage, Breakdown, Drain to Source 250 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 250 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 250 V   Voltage, Drain to Source 250 V  Siliconix / Vishay Voltage, Drain to Source 250 V  MOSFET Transistors Voltage, Drain to Source 250 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 250 V   Voltage, Forward, Diode 1 V  Siliconix / Vishay Voltage, Forward, Diode 1 V  MOSFET Transistors Voltage, Forward, Diode 1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1 V   Voltage, Gate to Source ±30 V  Siliconix / Vishay Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.183" (4.65mm)  Siliconix / Vishay Width 0.183" (4.65mm)  MOSFET Transistors Width 0.183" (4.65mm)  Siliconix / Vishay MOSFET Transistors Width 0.183" (4.65mm)  
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