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SUB75P03-07-E3 - 

MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.0055Ohm; ID -75A; TO-263; PD 187W; VGS +/-20V; gFS 20

Siliconix / Vishay SUB75P03-07-E3
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制造商產(chǎn)品編號(hào):
SUB75P03-07-E3
倉庫庫存編號(hào):
70026130
技術(shù)數(shù)據(jù)表:
View SUB75P03-07-E3 Datasheet Datasheet
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SUB75P03-07-E3產(chǎn)品信息

  Brand/Series  SUB Series  
  Current, Drain  -75 A  
  Gate Charge, Total  160 nC  
  Package Type  TO-263  
  Polarization  P-Channel  
  Power Dissipation  187 W  
  Resistance, Drain to Source On  0.0055 Ohm  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Time, Turn-Off Delay  150 ns  
  Time, Turn-On Delay  25 ns  
  Transconductance, Forward  20 S  
  Voltage, Breakdown, Drain to Source  -30 V  
  Voltage, Forward, Diode  -1.2 V  
  Voltage, Gate to Source  ±20 V  
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SUB75P03-07-E3相關(guān)搜索

Brand/Series SUB Series  Siliconix / Vishay Brand/Series SUB Series  MOSFET Transistors Brand/Series SUB Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUB Series   Current, Drain -75 A  Siliconix / Vishay Current, Drain -75 A  MOSFET Transistors Current, Drain -75 A  Siliconix / Vishay MOSFET Transistors Current, Drain -75 A   Gate Charge, Total 160 nC  Siliconix / Vishay Gate Charge, Total 160 nC  MOSFET Transistors Gate Charge, Total 160 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 160 nC   Package Type TO-263  Siliconix / Vishay Package Type TO-263  MOSFET Transistors Package Type TO-263  Siliconix / Vishay MOSFET Transistors Package Type TO-263   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 187 W  Siliconix / Vishay Power Dissipation 187 W  MOSFET Transistors Power Dissipation 187 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 187 W   Resistance, Drain to Source On 0.0055 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.0055 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.0055 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0055 Ohm   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-Off Delay 150 ns  Siliconix / Vishay Time, Turn-Off Delay 150 ns  MOSFET Transistors Time, Turn-Off Delay 150 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 150 ns   Time, Turn-On Delay 25 ns  Siliconix / Vishay Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Voltage, Breakdown, Drain to Source -30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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