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SIHG73N60E-GE3 - 

SiHG73N60E-GE3 N-channel MOSFET Transistor, 73 A, 600 V, 3-Pin TO-247AC

Siliconix / Vishay SIHG73N60E-GE3
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制造商產(chǎn)品編號(hào):
SIHG73N60E-GE3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70243819
技術(shù)數(shù)據(jù)表:
View SIHG73N60E-GE3 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

SIHG73N60E-GE3產(chǎn)品概述

Features:
  • Low Figure-of-Merit (FOM)
  • Low Input Capacitance
  • Reduced Switching and Conduction Losses
  • Avalanche Energy Rated (UIS)
  • Ultra Low Gate Charge (UIS)
    Applications:
  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction Power Supplies (PFC)
  • Lighting — HID and Fluorescent Ballast
  • Industrial— Welding, Induction Heating, Motor Drives, Battery Chargers, Renewable Energy, Solar
  • SIHG73N60E-GE3產(chǎn)品信息

      Capacitance, Input  7700 pF @ 100 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  73 A  
      Dimensions  15.87 x 5.31 x 20.82 mm  
      Fall Time  180 ns  
      Gate Charge, Total  48 nC  
      Height  0.82" (20.82mm)  
      Length  0.625" <5/8> (15.875mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-247AC  
      Polarization  N-Channel  
      Power Dissipation  520 W  
      Resistance, Drain to Source On  0.039 Ω  
      Resistance, Thermal, Junction to Case  0.24 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  40 °C/W  
      Time, Turn-Off Delay  290 ns  
      Time, Turn-On Delay  63 ns  
      Transconductance, Forward  12 S  
      Typical Gate Charge @ Vgs  241 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  600 V  
      Voltage, Drain to Source  600 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.209" (5.31mm)  
    關(guān)鍵詞         

    SIHG73N60E-GE3相關(guān)搜索

    Capacitance, Input 7700 pF @ 100 V  Siliconix / Vishay Capacitance, Input 7700 pF @ 100 V  MOSFET Transistors Capacitance, Input 7700 pF @ 100 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 7700 pF @ 100 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 73 A  Siliconix / Vishay Current, Drain 73 A  MOSFET Transistors Current, Drain 73 A  Siliconix / Vishay MOSFET Transistors Current, Drain 73 A   Dimensions 15.87 x 5.31 x 20.82 mm  Siliconix / Vishay Dimensions 15.87 x 5.31 x 20.82 mm  MOSFET Transistors Dimensions 15.87 x 5.31 x 20.82 mm  Siliconix / Vishay MOSFET Transistors Dimensions 15.87 x 5.31 x 20.82 mm   Fall Time 180 ns  Siliconix / Vishay Fall Time 180 ns  MOSFET Transistors Fall Time 180 ns  Siliconix / Vishay MOSFET Transistors Fall Time 180 ns   Gate Charge, Total 48 nC  Siliconix / Vishay Gate Charge, Total 48 nC  MOSFET Transistors Gate Charge, Total 48 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 48 nC   Height 0.82" (20.82mm)  Siliconix / Vishay Height 0.82" (20.82mm)  MOSFET Transistors Height 0.82" (20.82mm)  Siliconix / Vishay MOSFET Transistors Height 0.82" (20.82mm)   Length 0.625" <5/8> (15.875mm)  Siliconix / Vishay Length 0.625" <5/8> (15.875mm)  MOSFET Transistors Length 0.625" <5/8> (15.875mm)  Siliconix / Vishay MOSFET Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  Siliconix / Vishay Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Siliconix / Vishay MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-247AC  Siliconix / Vishay Package Type TO-247AC  MOSFET Transistors Package Type TO-247AC  Siliconix / Vishay MOSFET Transistors Package Type TO-247AC   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 520 W  Siliconix / Vishay Power Dissipation 520 W  MOSFET Transistors Power Dissipation 520 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 520 W   Resistance, Drain to Source On 0.039 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.039 Ω  MOSFET Transistors Resistance, Drain to Source On 0.039 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.039 Ω   Resistance, Thermal, Junction to Case 0.24 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.24 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.24 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.24 °C/W   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Turn-Off Delay 290 ns  Siliconix / Vishay Time, Turn-Off Delay 290 ns  MOSFET Transistors Time, Turn-Off Delay 290 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 290 ns   Time, Turn-On Delay 63 ns  Siliconix / Vishay Time, Turn-On Delay 63 ns  MOSFET Transistors Time, Turn-On Delay 63 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 63 ns   Transconductance, Forward 12 S  Siliconix / Vishay Transconductance, Forward 12 S  MOSFET Transistors Transconductance, Forward 12 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 12 S   Typical Gate Charge @ Vgs 241 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 241 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 241 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 241 nC @ 10 V   Voltage, Breakdown, Drain to Source 600 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 600 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V   Voltage, Drain to Source 600 V  Siliconix / Vishay Voltage, Drain to Source 600 V  MOSFET Transistors Voltage, Drain to Source 600 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 600 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.209" (5.31mm)  Siliconix / Vishay Width 0.209" (5.31mm)  MOSFET Transistors Width 0.209" (5.31mm)  Siliconix / Vishay MOSFET Transistors Width 0.209" (5.31mm)  
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