Brand/Series |
SI79 Series |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Dual Gate, Dual Source, Quad Drain |
|
Current, Drain |
1.8 A |
|
Dimensions |
3.15 x 3.15 x 1.07 mm |
|
Gate Charge, Total |
5.2 nC |
|
Height |
0.042" (1.07mm) |
|
Length |
0.124" (3.15mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
8 |
|
Package Type |
PowerPAK-SO-8 |
|
Polarization |
N-Channel |
|
Power Dissipation |
1.3 W |
|
Resistance, Drain to Source On |
0.23 Ω |
|
Temperature, Operating |
-55 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
77 °C/W |
|
Time, Turn-Off Delay |
8 ns |
|
Time, Turn-On Delay |
7 ns |
|
Transconductance, Forward |
5.3 S |
|
Typical Gate Charge @ Vgs |
5.2 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
100 V |
|
Voltage, Drain to Source |
100 V |
|
Voltage, Forward, Diode |
1.2 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.124" (3.15mm) |
|
關(guān)鍵詞 |