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SI6463BDQ-T1-E3 - 

P-CH MOSFET TSSOP-8 20V 15MOHM @ 4.5V

Siliconix / Vishay SI6463BDQ-T1-E3
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制造商產(chǎn)品編號(hào):
SI6463BDQ-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026252
技術(shù)數(shù)據(jù)表:
View SI6463BDQ-T1-E3 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI6463BDQ-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI6463BDQ-T1-E3產(chǎn)品信息

      Brand/Series  SI64 Series  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Dual Drain, Dual Gate, Quad  
      Current, Drain  -4.9 A  
      Dimensions  4.5 x 3.1 x 1.05 mm  
      Fall Time  150 ns  
      Gate Charge, Total  60 nC  
      Height  0.041" (1.05mm)  
      Length  0.177" (4.5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TSSOP  
      Polarization  P-Channel  
      Power Dissipation  1.05 W  
      Resistance, Drain to Source On  0.015 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  120 °C/W  
      Time, Turn-Off Delay  300 ns  
      Time, Turn-On Delay  55 ns  
      Transconductance, Forward  34 S  
      Typical Gate Charge @ Vgs  40 nC @ -10 V  
      Voltage, Breakdown, Drain to Source  -20 V  
      Voltage, Drain to Source  -20 V  
      Voltage, Forward, Diode  -1.1 V  
      Voltage, Gate to Source  ±8 V  
      Width  0.122" (3.1mm)  
    關(guān)鍵詞         

    SI6463BDQ-T1-E3相關(guān)搜索

    Brand/Series SI64 Series  Siliconix / Vishay Brand/Series SI64 Series  MOSFET Transistors Brand/Series SI64 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI64 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay Configuration Dual Drain, Dual Gate, Quad  MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad   Current, Drain -4.9 A  Siliconix / Vishay Current, Drain -4.9 A  MOSFET Transistors Current, Drain -4.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -4.9 A   Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay Dimensions 4.5 x 3.1 x 1.05 mm  MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm   Fall Time 150 ns  Siliconix / Vishay Fall Time 150 ns  MOSFET Transistors Fall Time 150 ns  Siliconix / Vishay MOSFET Transistors Fall Time 150 ns   Gate Charge, Total 60 nC  Siliconix / Vishay Gate Charge, Total 60 nC  MOSFET Transistors Gate Charge, Total 60 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 60 nC   Height 0.041" (1.05mm)  Siliconix / Vishay Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  Siliconix / Vishay MOSFET Transistors Height 0.041" (1.05mm)   Length 0.177" (4.5mm)  Siliconix / Vishay Length 0.177" (4.5mm)  MOSFET Transistors Length 0.177" (4.5mm)  Siliconix / Vishay MOSFET Transistors Length 0.177" (4.5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TSSOP  Siliconix / Vishay Package Type TSSOP  MOSFET Transistors Package Type TSSOP  Siliconix / Vishay MOSFET Transistors Package Type TSSOP   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.05 W  Siliconix / Vishay Power Dissipation 1.05 W  MOSFET Transistors Power Dissipation 1.05 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.05 W   Resistance, Drain to Source On 0.015 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.015 Ω  MOSFET Transistors Resistance, Drain to Source On 0.015 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.015 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 120 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 120 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 120 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 120 °C/W   Time, Turn-Off Delay 300 ns  Siliconix / Vishay Time, Turn-Off Delay 300 ns  MOSFET Transistors Time, Turn-Off Delay 300 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 300 ns   Time, Turn-On Delay 55 ns  Siliconix / Vishay Time, Turn-On Delay 55 ns  MOSFET Transistors Time, Turn-On Delay 55 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 55 ns   Transconductance, Forward 34 S  Siliconix / Vishay Transconductance, Forward 34 S  MOSFET Transistors Transconductance, Forward 34 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 34 S   Typical Gate Charge @ Vgs 40 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 40 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 40 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 40 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.1 V  Siliconix / Vishay Voltage, Forward, Diode -1.1 V  MOSFET Transistors Voltage, Forward, Diode -1.1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.1 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.122" (3.1mm)  Siliconix / Vishay Width 0.122" (3.1mm)  MOSFET Transistors Width 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Width 0.122" (3.1mm)  
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