Brand/Series |
SI45 Series |
|
Channel Mode |
Enhancement |
|
Channel Type |
N, P |
|
Configuration |
Dual Gate, Dual Source, Quad Drain |
|
Current, Drain |
-4.1, 6.3 A |
|
Dimensions |
5 x 4 x 1.55 mm |
|
Gate Charge, Total |
11.5/13.5 nC |
|
Height |
0.061" (1.55mm) |
|
Length |
0.196" (5mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
8 |
|
Package Type |
SO-8 |
|
Polarization |
N-Channel and P-Channel |
|
Power Dissipation |
1.3 W |
|
Resistance, Drain to Source On |
0.027.0.06 Ω |
|
Temperature, Operating |
-55 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
75/76 °C/W |
|
Time, Turn-Off Delay |
35, 60 ns |
|
Time, Turn-On Delay |
15, 21 ns |
|
Transconductance, Forward |
12, 18 S |
|
Typical Gate Charge @ Vgs |
11.5 nC @ 5 V, 13.5 nC @ 5 V |
|
Voltage, Breakdown, Drain to Source |
30/-8 V |
|
Voltage, Drain to Source |
-8, 30 V |
|
Voltage, Forward, Diode |
0.73/-0.75 V |
|
Voltage, Gate to Source |
±8, ±20 V |
|
Width |
0.157" (4mm) |
|
關鍵詞 |