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SI2307BDS-T1-E3 - 

MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W

Siliconix / Vishay SI2307BDS-T1-E3
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制造商產(chǎn)品編號(hào):
SI2307BDS-T1-E3
倉庫庫存編號(hào):
70026066
技術(shù)數(shù)據(jù)表:
View SI2307BDS-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI2307BDS-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices
  • SI2307BDS-T1-E3產(chǎn)品信息

      Brand/Series  SI23 Series  
      Capacitance, Input  380 pF @ -15 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -2 A  
      Dimensions  3.04 x 1.4 x 1.02 mm  
      Gate Charge, Total  9 nC  
      Height  0.04" (1.02mm)  
      Length  0.119" (3.04mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-236  
      Polarization  P-Channel  
      Power Dissipation  0.75 W  
      Resistance, Drain to Source On  0.13 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  25 ns  
      Time, Turn-On Delay  9 ns  
      Transconductance, Forward  5 S  
      Typical Gate Charge @ Vgs  9 nC @ -15 V  
      Voltage, Breakdown, Drain to Source  -30 V  
      Voltage, Drain to Source  -30 V  
      Voltage, Forward, Diode  -0.85 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.055" (1.4mm)  
    關(guān)鍵詞         

    SI2307BDS-T1-E3相關(guān)搜索

    Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Capacitance, Input 380 pF @ -15 V  Siliconix / Vishay Capacitance, Input 380 pF @ -15 V  MOSFET Transistors Capacitance, Input 380 pF @ -15 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 380 pF @ -15 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -2 A  Siliconix / Vishay Current, Drain -2 A  MOSFET Transistors Current, Drain -2 A  Siliconix / Vishay MOSFET Transistors Current, Drain -2 A   Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay Dimensions 3.04 x 1.4 x 1.02 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm   Gate Charge, Total 9 nC  Siliconix / Vishay Gate Charge, Total 9 nC  MOSFET Transistors Gate Charge, Total 9 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 9 nC   Height 0.04" (1.02mm)  Siliconix / Vishay Height 0.04" (1.02mm)  MOSFET Transistors Height 0.04" (1.02mm)  Siliconix / Vishay MOSFET Transistors Height 0.04" (1.02mm)   Length 0.119" (3.04mm)  Siliconix / Vishay Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  Siliconix / Vishay MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Package Type TO-236  Siliconix / Vishay Package Type TO-236  MOSFET Transistors Package Type TO-236  Siliconix / Vishay MOSFET Transistors Package Type TO-236   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 0.75 W  Siliconix / Vishay Power Dissipation 0.75 W  MOSFET Transistors Power Dissipation 0.75 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.75 W   Resistance, Drain to Source On 0.13 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.13 Ω  MOSFET Transistors Resistance, Drain to Source On 0.13 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.13 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 25 ns  Siliconix / Vishay Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 9 ns  Siliconix / Vishay Time, Turn-On Delay 9 ns  MOSFET Transistors Time, Turn-On Delay 9 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 9 ns   Transconductance, Forward 5 S  Siliconix / Vishay Transconductance, Forward 5 S  MOSFET Transistors Transconductance, Forward 5 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 5 S   Typical Gate Charge @ Vgs 9 nC @ -15 V  Siliconix / Vishay Typical Gate Charge @ Vgs 9 nC @ -15 V  MOSFET Transistors Typical Gate Charge @ Vgs 9 nC @ -15 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 9 nC @ -15 V   Voltage, Breakdown, Drain to Source -30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -30 V   Voltage, Drain to Source -30 V  Siliconix / Vishay Voltage, Drain to Source -30 V  MOSFET Transistors Voltage, Drain to Source -30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -30 V   Voltage, Forward, Diode -0.85 V  Siliconix / Vishay Voltage, Forward, Diode -0.85 V  MOSFET Transistors Voltage, Forward, Diode -0.85 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -0.85 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.055" (1.4mm)  Siliconix / Vishay Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  Siliconix / Vishay MOSFET Transistors Width 0.055" (1.4mm)  
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