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SI1555DL-T1-E3 - 

MOSFET; 20V N-CH, 8V P-CH COMP PAIR

Siliconix / Vishay SI1555DL-T1-E3
聲明：圖片僅供參考，請以實物為準！
制造商產品編號：
SI1555DL-T1-E3
倉庫庫存編號：
70026190
技術數(shù)據(jù)表：
View SI1555DL-T1-E3 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數(shù)據(jù)庫龐大，部分產品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

SI1555DL-T1-E3產品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI1555DL-T1-E3產品信息

      Brand/Series  SI15 Series  
      Channel Mode  Enhancement  
      Channel Type  N, P  
      Configuration  Single  
      Current, Drain  -0.41 (P), ±0.66 (N) A  
      Dimensions  2.2 x 1.35 x 1 mm  
      Height  0.039" (1mm)  
      Length  0.086" (2.2mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  6  
      Package Type  SOT-363  
      Power Dissipation  0.27 W  
      Resistance, Drain to Source On  0.63 (N), 1.2 (P) Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  10 (N), 10 (P) ns  
      Time, Turn-On Delay  10 (N), 6 (P) ns  
      Transconductance, Forward  1.2 (P), 1.5 (N) S  
      Typical Gate Charge @ Vgs  0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)  
      Voltage, Drain to Source  -8 (P), 20 (N) V  
      Voltage, Forward, Diode  -1.2 (P), 1.2 (N) V  
      Voltage, Gate to Source  ±12 (N), ±8 (P) V  
      Width  0.053" (1.35mm)  
    關鍵詞         

    SI1555DL-T1-E3相關搜索

    Brand/Series SI15 Series  Siliconix / Vishay Brand/Series SI15 Series  MOSFET Transistors Brand/Series SI15 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI15 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -0.41 (P), ±0.66 (N) A  Siliconix / Vishay Current, Drain -0.41 (P), ±0.66 (N) A  MOSFET Transistors Current, Drain -0.41 (P), ±0.66 (N) A  Siliconix / Vishay MOSFET Transistors Current, Drain -0.41 (P), ±0.66 (N) A   Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  Siliconix / Vishay Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  Siliconix / Vishay MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type SOT-363  Siliconix / Vishay Package Type SOT-363  MOSFET Transistors Package Type SOT-363  Siliconix / Vishay MOSFET Transistors Package Type SOT-363   Power Dissipation 0.27 W  Siliconix / Vishay Power Dissipation 0.27 W  MOSFET Transistors Power Dissipation 0.27 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.27 W   Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω  Siliconix / Vishay Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.63 (N), 1.2 (P) Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 10 (N), 10 (P) ns  Siliconix / Vishay Time, Turn-Off Delay 10 (N), 10 (P) ns  MOSFET Transistors Time, Turn-Off Delay 10 (N), 10 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 10 (N), 10 (P) ns   Time, Turn-On Delay 10 (N), 6 (P) ns  Siliconix / Vishay Time, Turn-On Delay 10 (N), 6 (P) ns  MOSFET Transistors Time, Turn-On Delay 10 (N), 6 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10 (N), 6 (P) ns   Transconductance, Forward 1.2 (P), 1.5 (N) S  Siliconix / Vishay Transconductance, Forward 1.2 (P), 1.5 (N) S  MOSFET Transistors Transconductance, Forward 1.2 (P), 1.5 (N) S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 1.2 (P), 1.5 (N) S   Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)  Siliconix / Vishay Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)  MOSFET Transistors Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V (N-Channel), 1.5 nC @ 4.5 V (P-Channel)   Voltage, Drain to Source -8 (P), 20 (N) V  Siliconix / Vishay Voltage, Drain to Source -8 (P), 20 (N) V  MOSFET Transistors Voltage, Drain to Source -8 (P), 20 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -8 (P), 20 (N) V   Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  Siliconix / Vishay Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V   Voltage, Gate to Source ±12 (N), ±8 (P) V  Siliconix / Vishay Voltage, Gate to Source ±12 (N), ±8 (P) V  MOSFET Transistors Voltage, Gate to Source ±12 (N), ±8 (P) V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 (N), ±8 (P) V   Width 0.053" (1.35mm)  Siliconix / Vishay Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  Siliconix / Vishay MOSFET Transistors Width 0.053" (1.35mm)  
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