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SI1551DL-T1-E3 - 

MOSFET, Dual, Complementary, 20V, 0.3/0.44A, SOT-363

Siliconix / Vishay SI1551DL-T1-E3
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制造商產(chǎn)品編號(hào):
SI1551DL-T1-E3
倉(cāng)庫(kù)庫(kù)存編號(hào):
70026093
技術(shù)數(shù)據(jù)表:
View SI1551DL-T1-E3 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

SI1551DL-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI1551DL-T1-E3產(chǎn)品信息

      Brand/Series  SI15 Series  
      Channel Mode  Enhancement  
      Channel Type  N, P  
      Configuration  Single  
      Current, Drain  -0.41, 0.29 A  
      Dimensions  2.2 x 1.35 x 1 mm  
      Gate Charge, Total  0.72/0.52 nC  
      Height  0.039" (1mm)  
      Length  0.086" (2.2mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  6  
      Package Type  SC-70  
      Polarization  N-Channel and P-Channel  
      Power Dissipation  0.27 W  
      Resistance, Drain to Source On  1.8, 4.2 Ω  
      Temperature, Operating  -55 to 150 °C  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  400 °C/W  
      Time, Turn-Off Delay  8.5, 10 ns  
      Time, Turn-On Delay  7.5, 23 ns  
      Transconductance, Forward  0.3, 0.8 S  
      Typical Gate Charge @ Vgs  0.52 nC @ 4.5 V, 0.72 nC @ 4.5 V  
      Voltage, Breakdown, Drain to Source  20/-20 V  
      Voltage, Drain to Source  -20, 20 V  
      Voltage, Forward, Diode  0.8/-0.8 V  
      Voltage, Gate to Source  ±12 V  
      Width  0.053" (1.35mm)  
    關(guān)鍵詞         

    SI1551DL-T1-E3相關(guān)搜索

    Brand/Series SI15 Series  Siliconix / Vishay Brand/Series SI15 Series  MOSFET Transistors Brand/Series SI15 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI15 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -0.41, 0.29 A  Siliconix / Vishay Current, Drain -0.41, 0.29 A  MOSFET Transistors Current, Drain -0.41, 0.29 A  Siliconix / Vishay MOSFET Transistors Current, Drain -0.41, 0.29 A   Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Gate Charge, Total 0.72/0.52 nC  Siliconix / Vishay Gate Charge, Total 0.72/0.52 nC  MOSFET Transistors Gate Charge, Total 0.72/0.52 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 0.72/0.52 nC   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  Siliconix / Vishay Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  Siliconix / Vishay MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type SC-70  Siliconix / Vishay Package Type SC-70  MOSFET Transistors Package Type SC-70  Siliconix / Vishay MOSFET Transistors Package Type SC-70   Polarization N-Channel and P-Channel  Siliconix / Vishay Polarization N-Channel and P-Channel  MOSFET Transistors Polarization N-Channel and P-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel and P-Channel   Power Dissipation 0.27 W  Siliconix / Vishay Power Dissipation 0.27 W  MOSFET Transistors Power Dissipation 0.27 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.27 W   Resistance, Drain to Source On 1.8, 4.2 Ω  Siliconix / Vishay Resistance, Drain to Source On 1.8, 4.2 Ω  MOSFET Transistors Resistance, Drain to Source On 1.8, 4.2 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 1.8, 4.2 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 400 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 400 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 400 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 400 °C/W   Time, Turn-Off Delay 8.5, 10 ns  Siliconix / Vishay Time, Turn-Off Delay 8.5, 10 ns  MOSFET Transistors Time, Turn-Off Delay 8.5, 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 8.5, 10 ns   Time, Turn-On Delay 7.5, 23 ns  Siliconix / Vishay Time, Turn-On Delay 7.5, 23 ns  MOSFET Transistors Time, Turn-On Delay 7.5, 23 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 7.5, 23 ns   Transconductance, Forward 0.3, 0.8 S  Siliconix / Vishay Transconductance, Forward 0.3, 0.8 S  MOSFET Transistors Transconductance, Forward 0.3, 0.8 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.3, 0.8 S   Typical Gate Charge @ Vgs 0.52 nC @ 4.5 V, 0.72 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 0.52 nC @ 4.5 V, 0.72 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 0.52 nC @ 4.5 V, 0.72 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 0.52 nC @ 4.5 V, 0.72 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 20/-20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20/-20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20/-20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20/-20 V   Voltage, Drain to Source -20, 20 V  Siliconix / Vishay Voltage, Drain to Source -20, 20 V  MOSFET Transistors Voltage, Drain to Source -20, 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20, 20 V   Voltage, Forward, Diode 0.8/-0.8 V  Siliconix / Vishay Voltage, Forward, Diode 0.8/-0.8 V  MOSFET Transistors Voltage, Forward, Diode 0.8/-0.8 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.8/-0.8 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.053" (1.35mm)  Siliconix / Vishay Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  Siliconix / Vishay MOSFET Transistors Width 0.053" (1.35mm)  
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