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SI1032X-T1-E3 - 

20V (D-S) N-CH MOSFET W/ESD PROTECT

Siliconix / Vishay SI1032X-T1-E3
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
SI1032X-T1-E3
倉庫庫存編號:
70026184
技術數(shù)據(jù)表:
View SI1032X-T1-E3 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

SI1032X-T1-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI1032X-T1-E3產(chǎn)品信息

      Brand/Series  SI10 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  200 mA  
      Dimensions  1.7 x 0.95 x 0.8 mm  
      Gate Charge, Total  330 pC  
      Height  0.031" (0.8mm)  
      Length  0.066" (1.68mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  –55 TO +150 °C  
      Package Type  SC-75A, SC-89  
      Polarization  N-Channel  
      Power Dissipation  300 mW  
      Resistance, Drain to Source On  10 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  Maximum of 50 ns  
      Time, Turn-On Delay  Maximum of 50 ns  
      Transconductance, Forward  0.5 S  
      Typical Gate Charge @ Vgs  750 nC @ 4.5 V  
      Voltage, Breakdown, Drain to Source  20 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±6 V  
      Width  0.037" (0.95mm)  
    關鍵詞         

    SI1032X-T1-E3相關搜索

    Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 200 mA  Siliconix / Vishay Current, Drain 200 mA  MOSFET Transistors Current, Drain 200 mA  Siliconix / Vishay MOSFET Transistors Current, Drain 200 mA   Dimensions 1.7 x 0.95 x 0.8 mm  Siliconix / Vishay Dimensions 1.7 x 0.95 x 0.8 mm  MOSFET Transistors Dimensions 1.7 x 0.95 x 0.8 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.7 x 0.95 x 0.8 mm   Gate Charge, Total 330 pC  Siliconix / Vishay Gate Charge, Total 330 pC  MOSFET Transistors Gate Charge, Total 330 pC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 330 pC   Height 0.031" (0.8mm)  Siliconix / Vishay Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  Siliconix / Vishay MOSFET Transistors Height 0.031" (0.8mm)   Length 0.066" (1.68mm)  Siliconix / Vishay Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  Siliconix / Vishay MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature –55 TO +150 °C  Siliconix / Vishay Operating and Storage Temperature –55 TO +150 °C  MOSFET Transistors Operating and Storage Temperature –55 TO +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 TO +150 °C   Package Type SC-75A, SC-89  Siliconix / Vishay Package Type SC-75A, SC-89  MOSFET Transistors Package Type SC-75A, SC-89  Siliconix / Vishay MOSFET Transistors Package Type SC-75A, SC-89   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 300 mW  Siliconix / Vishay Power Dissipation 300 mW  MOSFET Transistors Power Dissipation 300 mW  Siliconix / Vishay MOSFET Transistors Power Dissipation 300 mW   Resistance, Drain to Source On 10 Ω  Siliconix / Vishay Resistance, Drain to Source On 10 Ω  MOSFET Transistors Resistance, Drain to Source On 10 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 10 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay Maximum of 50 ns  Siliconix / Vishay Time, Turn-Off Delay Maximum of 50 ns  MOSFET Transistors Time, Turn-Off Delay Maximum of 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay Maximum of 50 ns   Time, Turn-On Delay Maximum of 50 ns  Siliconix / Vishay Time, Turn-On Delay Maximum of 50 ns  MOSFET Transistors Time, Turn-On Delay Maximum of 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay Maximum of 50 ns   Transconductance, Forward 0.5 S  Siliconix / Vishay Transconductance, Forward 0.5 S  MOSFET Transistors Transconductance, Forward 0.5 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.5 S   Typical Gate Charge @ Vgs 750 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 750 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 750 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 750 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±6 V  Siliconix / Vishay Voltage, Gate to Source ±6 V  MOSFET Transistors Voltage, Gate to Source ±6 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±6 V   Width 0.037" (0.95mm)  Siliconix / Vishay Width 0.037" (0.95mm)  MOSFET Transistors Width 0.037" (0.95mm)  Siliconix / Vishay MOSFET Transistors Width 0.037" (0.95mm)  
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