Brand/Series |
SI10 Series |
|
Capacitance, Input |
23 pF@ -25 V, 30 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N, P |
|
Configuration |
Single |
|
Current, Drain |
-135, 305 mA |
|
Dimensions |
1.7 x 1.2 x 0.6 mm |
|
Gate Charge, Total |
750/1700 nC |
|
Height |
0.024" (0.6mm) |
|
Length |
0.066" (1.68mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
2 |
|
Number of Pins |
6 |
|
Package Type |
SC-89 |
|
Polarization |
N-Channel and P-Channel |
|
Power Dissipation |
250 mW |
|
Resistance, Drain to Source On |
3, 8 Ω |
|
Temperature, Operating |
-55 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
20, 35 ns |
|
Time, Turn-On Delay |
15, 20 ns |
|
Transconductance, Forward |
100, 200 mS |
|
Typical Gate Charge @ Vgs |
1700 nC @ 4.5 V, 750 nC @ 4.5 V |
|
Voltage, Breakdown, Drain to Source |
60/-60 V |
|
Voltage, Drain to Source |
-60, 60 V |
|
Voltage, Forward, Diode |
1.4/-1.4 V |
|
Voltage, Gate to Source |
±20 V |
|
Width |
0.047" (1.2mm) |
|
關(guān)鍵詞 |