SI1022R-T1-E3/BKN產(chǎn)品概述
Features:
Halogen-Free Option Available
TrenchFET® Power MOSFET: 1.8 V Rated
Gate-Source ESD Protected: 2000 V
High-Side Switching
Low On-Resistance: 0.7 Ω
Low Threshold: 0.8 V (Typ.)
Fast Switching Speed: 10 ns
Applications:
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Solid State Relays