DG611DY-E3 - 

The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. Each switch conducts equally well in both directions when on and blocks up to 16 Vp-p when off. Capacitances have been minimized to ensure fast switching and low-glitch energy. To achieve such fast and clean switching performance, the DG611/612/613 are built on the Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with low-power CMOS control logic and drivers. An epitaxial layer prevents latchup. The DG611 and DG612 differ only in that they respond to opposite logic levels. The versatile DG613 has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, one DPDT.