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NTD4804NT4G - 

IC, Transistor; Mosfet, N-Channel; 30V; 14.5A; DPAK-3; Cut Tape

ON Semiconductor NTD4804NT4G
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制造商產(chǎn)品編號:
NTD4804NT4G
倉庫庫存編號:
70275459
技術(shù)數(shù)據(jù)表:
View NTD4804NT4G Datasheet Datasheet
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NTD4804NT4G產(chǎn)品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  4490 pF @ 12 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  124 A  
  Dimensions  6.73 x 6.22 x 2.25 mm  
  Height  0.089" (2.25mm)  
  Length  0.264" (6.73mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  DPAK  
  Power Dissipation  107 W  
  Resistance, Drain to Source On  5.5 mΩ  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +175 °C  
  Time, Turn-Off Delay  35 ns  
  Time, Turn-On Delay  18 ns  
  Transconductance, Forward  23 sec  
  Typical Gate Charge @ Vgs  30 nC @ 4.5 V  
  Voltage, Drain to Source  30 V  
  Voltage, Forward, Diode  1.2 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.245" (6.22mm)  
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NTD4804NT4G相關(guān)搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 4490 pF @ 12 V  ON Semiconductor Capacitance, Input 4490 pF @ 12 V  MOSFET Transistors Capacitance, Input 4490 pF @ 12 V  ON Semiconductor MOSFET Transistors Capacitance, Input 4490 pF @ 12 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 124 A  ON Semiconductor Current, Drain 124 A  MOSFET Transistors Current, Drain 124 A  ON Semiconductor MOSFET Transistors Current, Drain 124 A   Dimensions 6.73 x 6.22 x 2.25 mm  ON Semiconductor Dimensions 6.73 x 6.22 x 2.25 mm  MOSFET Transistors Dimensions 6.73 x 6.22 x 2.25 mm  ON Semiconductor MOSFET Transistors Dimensions 6.73 x 6.22 x 2.25 mm   Height 0.089" (2.25mm)  ON Semiconductor Height 0.089" (2.25mm)  MOSFET Transistors Height 0.089" (2.25mm)  ON Semiconductor MOSFET Transistors Height 0.089" (2.25mm)   Length 0.264" (6.73mm)  ON Semiconductor Length 0.264" (6.73mm)  MOSFET Transistors Length 0.264" (6.73mm)  ON Semiconductor MOSFET Transistors Length 0.264" (6.73mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type DPAK  ON Semiconductor Package Type DPAK  MOSFET Transistors Package Type DPAK  ON Semiconductor MOSFET Transistors Package Type DPAK   Power Dissipation 107 W  ON Semiconductor Power Dissipation 107 W  MOSFET Transistors Power Dissipation 107 W  ON Semiconductor MOSFET Transistors Power Dissipation 107 W   Resistance, Drain to Source On 5.5 mΩ  ON Semiconductor Resistance, Drain to Source On 5.5 mΩ  MOSFET Transistors Resistance, Drain to Source On 5.5 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 5.5 mΩ   Temperature, Operating, Maximum +175 °C  ON Semiconductor Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  ON Semiconductor Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 35 ns  ON Semiconductor Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 18 ns  ON Semiconductor Time, Turn-On Delay 18 ns  MOSFET Transistors Time, Turn-On Delay 18 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 18 ns   Transconductance, Forward 23 sec  ON Semiconductor Transconductance, Forward 23 sec  MOSFET Transistors Transconductance, Forward 23 sec  ON Semiconductor MOSFET Transistors Transconductance, Forward 23 sec   Typical Gate Charge @ Vgs 30 nC @ 4.5 V  ON Semiconductor Typical Gate Charge @ Vgs 30 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 30 nC @ 4.5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 30 nC @ 4.5 V   Voltage, Drain to Source 30 V  ON Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.2 V  ON Semiconductor Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.245" (6.22mm)  ON Semiconductor Width 0.245" (6.22mm)  MOSFET Transistors Width 0.245" (6.22mm)  ON Semiconductor MOSFET Transistors Width 0.245" (6.22mm)  
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