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MPSW51AG - 

SS T092 HC XSTR PNP 40V -LEAD FREE

ON Semiconductor MPSW51AG
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制造商產(chǎn)品編號(hào):
MPSW51AG
倉(cāng)庫(kù)庫(kù)存編號(hào):
70100048
技術(shù)數(shù)據(jù)表:
View MPSW51AG Datasheet Datasheet
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MPSW51AG產(chǎn)品信息

  Configuration  Common Base  
  Current, Collector  -1000 mA  
  Current, Gain  50  
  Dimensions  5.21 x 4.19 x 7.87 mm  
  Frequency, Operating  50 MHz  
  Height  0.31" (7.87mm)  
  Length  0.205" (5.21mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  PNP  
  Power Dissipation  2.5 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  50 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  PNP  
  Type  High Current  
  Voltage, Breakdown, Collector to Emitter  -40 V  
  Voltage, Collector to Base  -50 V  
  Voltage, Collector to Emitter  -40 V  
  Voltage, Collector to Emitter, Saturation  -0.7 V  
  Voltage, Emitter to Base  -5 V  
  Width  0.165" (4.19mm)  
關(guān)鍵詞         

MPSW51AG相關(guān)搜索

Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector -1000 mA  ON Semiconductor Current, Collector -1000 mA  Bipolar Transistors Current, Collector -1000 mA  ON Semiconductor Bipolar Transistors Current, Collector -1000 mA   Current, Gain 50  ON Semiconductor Current, Gain 50  Bipolar Transistors Current, Gain 50  ON Semiconductor Bipolar Transistors Current, Gain 50   Dimensions 5.21 x 4.19 x 7.87 mm  ON Semiconductor Dimensions 5.21 x 4.19 x 7.87 mm  Bipolar Transistors Dimensions 5.21 x 4.19 x 7.87 mm  ON Semiconductor Bipolar Transistors Dimensions 5.21 x 4.19 x 7.87 mm   Frequency, Operating 50 MHz  ON Semiconductor Frequency, Operating 50 MHz  Bipolar Transistors Frequency, Operating 50 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 50 MHz   Height 0.31" (7.87mm)  ON Semiconductor Height 0.31" (7.87mm)  Bipolar Transistors Height 0.31" (7.87mm)  ON Semiconductor Bipolar Transistors Height 0.31" (7.87mm)   Length 0.205" (5.21mm)  ON Semiconductor Length 0.205" (5.21mm)  Bipolar Transistors Length 0.205" (5.21mm)  ON Semiconductor Bipolar Transistors Length 0.205" (5.21mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 2.5 W  ON Semiconductor Power Dissipation 2.5 W  Bipolar Transistors Power Dissipation 2.5 W  ON Semiconductor Bipolar Transistors Power Dissipation 2.5 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 50 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 50 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 50 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 50 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type High Current  ON Semiconductor Type High Current  Bipolar Transistors Type High Current  ON Semiconductor Bipolar Transistors Type High Current   Voltage, Breakdown, Collector to Emitter -40 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter -40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter -40 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter -40 V   Voltage, Collector to Base -50 V  ON Semiconductor Voltage, Collector to Base -50 V  Bipolar Transistors Voltage, Collector to Base -50 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base -50 V   Voltage, Collector to Emitter -40 V  ON Semiconductor Voltage, Collector to Emitter -40 V  Bipolar Transistors Voltage, Collector to Emitter -40 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter -40 V   Voltage, Collector to Emitter, Saturation -0.7 V  ON Semiconductor Voltage, Collector to Emitter, Saturation -0.7 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation -0.7 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation -0.7 V   Voltage, Emitter to Base -5 V  ON Semiconductor Voltage, Emitter to Base -5 V  Bipolar Transistors Voltage, Emitter to Base -5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base -5 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Bipolar Transistors Width 0.165" (4.19mm)  ON Semiconductor Bipolar Transistors Width 0.165" (4.19mm)  
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