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MPS8099G - 

Transistor; TO-92; NPN; 80; 80; 5.0; 500 Collector; -55 to +150; 80 VDC, pbf

ON Semiconductor MPS8099G
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制造商產(chǎn)品編號(hào):
MPS8099G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70099646
技術(shù)數(shù)據(jù)表:
View MPS8099G Datasheet Datasheet
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MPS8099G產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  500 mA  
  Current, Gain  75  
  Dimensions  5.20 x 4.19 x 5.33 mm  
  Frequency, Operating  150 MHz  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Amplifier  
  Voltage, Breakdown, Collector to Emitter  80 V  
  Voltage, Collector to Base  80 V  
  Voltage, Collector to Emitter  80 V  
  Voltage, Collector to Emitter, Saturation  0.4 V  
  Voltage, Emitter to Base  6 V  
  Width  0.165" (4.19mm)  
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MPS8099G相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 500 mA  ON Semiconductor Current, Collector 500 mA  Bipolar Transistors Current, Collector 500 mA  ON Semiconductor Bipolar Transistors Current, Collector 500 mA   Current, Gain 75  ON Semiconductor Current, Gain 75  Bipolar Transistors Current, Gain 75  ON Semiconductor Bipolar Transistors Current, Gain 75   Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 4.19 x 5.33 mm  Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm   Frequency, Operating 150 MHz  ON Semiconductor Frequency, Operating 150 MHz  Bipolar Transistors Frequency, Operating 150 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 150 MHz   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  ON Semiconductor Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  ON Semiconductor Bipolar Transistors Length 0.204" (5.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 625 mW  ON Semiconductor Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  ON Semiconductor Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Amplifier  ON Semiconductor Type Amplifier  Bipolar Transistors Type Amplifier  ON Semiconductor Bipolar Transistors Type Amplifier   Voltage, Breakdown, Collector to Emitter 80 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Base 80 V  ON Semiconductor Voltage, Collector to Base 80 V  Bipolar Transistors Voltage, Collector to Base 80 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 80 V   Voltage, Collector to Emitter 80 V  ON Semiconductor Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 0.4 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Bipolar Transistors Width 0.165" (4.19mm)  ON Semiconductor Bipolar Transistors Width 0.165" (4.19mm)  
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