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MMBD701LT1 - 

Diode, Schottky; 1 mADC; 70 V (Min.) @ 25 degC; 1.0 V (Max.) @ 25 degC; 70 V; S

ON Semiconductor MMBD701LT1
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制造商產(chǎn)品編號:
MMBD701LT1
倉庫庫存編號:
70100750
技術(shù)數(shù)據(jù)表:
View MMBD701LT1 Datasheet Datasheet
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MMBD701LT1產(chǎn)品概述

Scotty Barrier Diodes

MMBD701LT1產(chǎn)品信息

  Brand/Series  Schottky Diode Series  
  Capacitance  1.0 pF (Max.) @ 25°C  
  Capacitance, Junction  0.5 pF  
  Current, Forward  10 mA  
  Package Type  SOT-23 (TO-236)  
  Power Dissipation  200 mW  
  Primary Type  Schottky Barrier  
  Temperature, Junction, Maximum  125 °C  
  Temperature, Operating  -55 to 125 °C  
  Voltage, Breakdown  70 V (Min.) @ 25°C  
  Voltage, Forward  0.42 V  
  Voltage, Repetitive Peak  70 V  
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MMBD701LT1相關(guān)搜索

Brand/Series Schottky Diode Series  ON Semiconductor Brand/Series Schottky Diode Series  Rectifier & Schottky Diodes Brand/Series Schottky Diode Series  ON Semiconductor Rectifier & Schottky Diodes Brand/Series Schottky Diode Series   Capacitance 1.0 pF (Max.) @ 25°C  ON Semiconductor Capacitance 1.0 pF (Max.) @ 25°C  Rectifier & Schottky Diodes Capacitance 1.0 pF (Max.) @ 25°C  ON Semiconductor Rectifier & Schottky Diodes Capacitance 1.0 pF (Max.) @ 25°C   Capacitance, Junction 0.5 pF  ON Semiconductor Capacitance, Junction 0.5 pF  Rectifier & Schottky Diodes Capacitance, Junction 0.5 pF  ON Semiconductor Rectifier & Schottky Diodes Capacitance, Junction 0.5 pF   Current, Forward 10 mA  ON Semiconductor Current, Forward 10 mA  Rectifier & Schottky Diodes Current, Forward 10 mA  ON Semiconductor Rectifier & Schottky Diodes Current, Forward 10 mA   Package Type SOT-23 (TO-236)  ON Semiconductor Package Type SOT-23 (TO-236)  Rectifier & Schottky Diodes Package Type SOT-23 (TO-236)  ON Semiconductor Rectifier & Schottky Diodes Package Type SOT-23 (TO-236)   Power Dissipation 200 mW  ON Semiconductor Power Dissipation 200 mW  Rectifier & Schottky Diodes Power Dissipation 200 mW  ON Semiconductor Rectifier & Schottky Diodes Power Dissipation 200 mW   Primary Type Schottky Barrier  ON Semiconductor Primary Type Schottky Barrier  Rectifier & Schottky Diodes Primary Type Schottky Barrier  ON Semiconductor Rectifier & Schottky Diodes Primary Type Schottky Barrier   Temperature, Junction, Maximum 125 °C  ON Semiconductor Temperature, Junction, Maximum 125 °C  Rectifier & Schottky Diodes Temperature, Junction, Maximum 125 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Junction, Maximum 125 °C   Temperature, Operating -55 to 125 °C  ON Semiconductor Temperature, Operating -55 to 125 °C  Rectifier & Schottky Diodes Temperature, Operating -55 to 125 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Operating -55 to 125 °C   Voltage, Breakdown 70 V (Min.) @ 25°C  ON Semiconductor Voltage, Breakdown 70 V (Min.) @ 25°C  Rectifier & Schottky Diodes Voltage, Breakdown 70 V (Min.) @ 25°C  ON Semiconductor Rectifier & Schottky Diodes Voltage, Breakdown 70 V (Min.) @ 25°C   Voltage, Forward 0.42 V  ON Semiconductor Voltage, Forward 0.42 V  Rectifier & Schottky Diodes Voltage, Forward 0.42 V  ON Semiconductor Rectifier & Schottky Diodes Voltage, Forward 0.42 V   Voltage, Repetitive Peak 70 V  ON Semiconductor Voltage, Repetitive Peak 70 V  Rectifier & Schottky Diodes Voltage, Repetitive Peak 70 V  ON Semiconductor Rectifier & Schottky Diodes Voltage, Repetitive Peak 70 V  
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