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MJD31CG - 

TRANSISTOR, POWER; NPN; 100 VDC (MAX.) VCE; 100 VDC (MAX.)VCB; 5 VDC (MAX.) VEB

ON Semiconductor MJD31CG
聲明:圖片僅供參考,請以實物為準!
制造商產品編號:
MJD31CG
倉庫庫存編號:
70099633
技術數(shù)據表:
View MJD31CG Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數(shù)據庫龐大,部分產品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

MJD31CG產品概述

NPN Power Transistors, ON Semiconductor
These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

MJD31CG產品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  3 A  
  Current, Gain  10  
  Dimensions  6.73 x 6.22 x 2.38 mm  
  Frequency, Operating  3 MHz  
  Height  0.094" (2.38mm)  
  Length  0.264" (6.73mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  DPAK  
  Polarity  NPN  
  Power Dissipation  15 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  8.3 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  1.2 V  
  Voltage, Emitter to Base  5 V  
  Width  0.245" (6.22mm)  
關鍵詞         

MJD31CG相關搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 3 A  ON Semiconductor Current, Collector 3 A  Bipolar Transistors Current, Collector 3 A  ON Semiconductor Bipolar Transistors Current, Collector 3 A   Current, Gain 10  ON Semiconductor Current, Gain 10  Bipolar Transistors Current, Gain 10  ON Semiconductor Bipolar Transistors Current, Gain 10   Dimensions 6.73 x 6.22 x 2.38 mm  ON Semiconductor Dimensions 6.73 x 6.22 x 2.38 mm  Bipolar Transistors Dimensions 6.73 x 6.22 x 2.38 mm  ON Semiconductor Bipolar Transistors Dimensions 6.73 x 6.22 x 2.38 mm   Frequency, Operating 3 MHz  ON Semiconductor Frequency, Operating 3 MHz  Bipolar Transistors Frequency, Operating 3 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 3 MHz   Height 0.094" (2.38mm)  ON Semiconductor Height 0.094" (2.38mm)  Bipolar Transistors Height 0.094" (2.38mm)  ON Semiconductor Bipolar Transistors Height 0.094" (2.38mm)   Length 0.264" (6.73mm)  ON Semiconductor Length 0.264" (6.73mm)  Bipolar Transistors Length 0.264" (6.73mm)  ON Semiconductor Bipolar Transistors Length 0.264" (6.73mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type DPAK  ON Semiconductor Package Type DPAK  Bipolar Transistors Package Type DPAK  ON Semiconductor Bipolar Transistors Package Type DPAK   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 15 W  ON Semiconductor Power Dissipation 15 W  Bipolar Transistors Power Dissipation 15 W  ON Semiconductor Bipolar Transistors Power Dissipation 15 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 8.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 8.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 8.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 8.3 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  ON Semiconductor Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  ON Semiconductor Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 1.2 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1.2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.2 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.2 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.245" (6.22mm)  ON Semiconductor Width 0.245" (6.22mm)  Bipolar Transistors Width 0.245" (6.22mm)  ON Semiconductor Bipolar Transistors Width 0.245" (6.22mm)  
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