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BC847ALT1G - 

ON Semi BC847ALT1G NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin SOT-23

ON Semiconductor BC847ALT1G
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制造商產(chǎn)品編號(hào):
BC847ALT1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70300194
技術(shù)數(shù)據(jù)表:
View BC847ALT1G Datasheet Datasheet
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BC847ALT1G產(chǎn)品信息

  Brand/Series  BC Series  
  Configuration  Common Base  
  Current, Collector  100 mA  
  Current, Gain  90  
  Dimensions  3.04 x 1.40 x 1.01 mm  
  Frequency, Operating  100 MHz  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Power Dissipation  300 mW  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Range  Maximum of +150 °C  
  Transistor Type  NPN  
  Voltage, Collector to Base  50 V  
  Voltage, Collector to Emitter  45 V  
  Voltage, Collector to Emitter, Saturation  0.25 V  
  Voltage, Emitter to Base  6 V  
  Width  0.055" (1.4mm)  
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BC847ALT1G相關(guān)搜索

Brand/Series BC Series  ON Semiconductor Brand/Series BC Series  Bipolar Transistors Brand/Series BC Series  ON Semiconductor Bipolar Transistors Brand/Series BC Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 100 mA  ON Semiconductor Current, Collector 100 mA  Bipolar Transistors Current, Collector 100 mA  ON Semiconductor Bipolar Transistors Current, Collector 100 mA   Current, Gain 90  ON Semiconductor Current, Gain 90  Bipolar Transistors Current, Gain 90  ON Semiconductor Bipolar Transistors Current, Gain 90   Dimensions 3.04 x 1.40 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.40 x 1.01 mm  Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm  ON Semiconductor Bipolar Transistors Dimensions 3.04 x 1.40 x 1.01 mm   Frequency, Operating 100 MHz  ON Semiconductor Frequency, Operating 100 MHz  Bipolar Transistors Frequency, Operating 100 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 100 MHz   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  Bipolar Transistors Height 0.04" (1.01mm)  ON Semiconductor Bipolar Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  Bipolar Transistors Length 0.119" (3.04mm)  ON Semiconductor Bipolar Transistors Length 0.119" (3.04mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  Bipolar Transistors Package Type SOT-23  ON Semiconductor Bipolar Transistors Package Type SOT-23   Power Dissipation 300 mW  ON Semiconductor Power Dissipation 300 mW  Bipolar Transistors Power Dissipation 300 mW  ON Semiconductor Bipolar Transistors Power Dissipation 300 mW   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  ON Semiconductor Temperature, Operating, Range Maximum of +150 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Voltage, Collector to Base 50 V  ON Semiconductor Voltage, Collector to Base 50 V  Bipolar Transistors Voltage, Collector to Base 50 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 50 V   Voltage, Collector to Emitter 45 V  ON Semiconductor Voltage, Collector to Emitter 45 V  Bipolar Transistors Voltage, Collector to Emitter 45 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 45 V   Voltage, Collector to Emitter, Saturation 0.25 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.25 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.25 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.25 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  Bipolar Transistors Width 0.055" (1.4mm)  ON Semiconductor Bipolar Transistors Width 0.055" (1.4mm)  
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