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BAT54LT1G - 

DIODE, SCHOTTKY; 200 MADC (MAX.) IF; 200 MW @ 25C; 7.5 PF (TYP.) @ 25C

ON Semiconductor BAT54LT1G
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制造商產(chǎn)品編號(hào):
BAT54LT1G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70099483
技術(shù)數(shù)據(jù)表:
View BAT54LT1G Datasheet Datasheet
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BAT54LT1G產(chǎn)品信息

  Brand/Series  BAT Series  
  Capacitance, Junction  10 pF  
  Configuration  Single  
  Current, Forward, Continuous  200 A  
  Current, On-State, Non-Repetitive Peak  600 mA  
  Current, Peak  2 μA  
  Dimensions  3.04 x 1.4 x 1.01 mm  
  Diode Type  Schottky Barrier  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Mounting Type  Surface Mount  
  Number of Pins  3  
  Package Type  TO-236AB  
  Power Dissipation  200 mW  
  Primary Type  Schottky Barrier  
  Rectifier Type  Switching  
  Speed, Switching  Fast  
  Temperature, Junction, Maximum  125 °C  
  Temperature, Operating  -55 to 125 °C  
  Temperature, Operating, Maximum  +125 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +125 °C  
  Time, Recovery  5 ns  
  Time, Reverse Recovery  5 ns  
  Voltage, Forward  0.8 V  
  Voltage, Repetitive Peak  30 V  
  Width  0.055" (1.4mm)  
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BAT54LT1G相關(guān)搜索

Brand/Series BAT Series  ON Semiconductor Brand/Series BAT Series  Rectifier & Schottky Diodes Brand/Series BAT Series  ON Semiconductor Rectifier & Schottky Diodes Brand/Series BAT Series   Capacitance, Junction 10 pF  ON Semiconductor Capacitance, Junction 10 pF  Rectifier & Schottky Diodes Capacitance, Junction 10 pF  ON Semiconductor Rectifier & Schottky Diodes Capacitance, Junction 10 pF   Configuration Single  ON Semiconductor Configuration Single  Rectifier & Schottky Diodes Configuration Single  ON Semiconductor Rectifier & Schottky Diodes Configuration Single   Current, Forward, Continuous 200 A  ON Semiconductor Current, Forward, Continuous 200 A  Rectifier & Schottky Diodes Current, Forward, Continuous 200 A  ON Semiconductor Rectifier & Schottky Diodes Current, Forward, Continuous 200 A   Current, On-State, Non-Repetitive Peak 600 mA  ON Semiconductor Current, On-State, Non-Repetitive Peak 600 mA  Rectifier & Schottky Diodes Current, On-State, Non-Repetitive Peak 600 mA  ON Semiconductor Rectifier & Schottky Diodes Current, On-State, Non-Repetitive Peak 600 mA   Current, Peak 2 μA  ON Semiconductor Current, Peak 2 μA  Rectifier & Schottky Diodes Current, Peak 2 μA  ON Semiconductor Rectifier & Schottky Diodes Current, Peak 2 μA   Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.4 x 1.01 mm  Rectifier & Schottky Diodes Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Rectifier & Schottky Diodes Dimensions 3.04 x 1.4 x 1.01 mm   Diode Type Schottky Barrier  ON Semiconductor Diode Type Schottky Barrier  Rectifier & Schottky Diodes Diode Type Schottky Barrier  ON Semiconductor Rectifier & Schottky Diodes Diode Type Schottky Barrier   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  Rectifier & Schottky Diodes Height 0.04" (1.01mm)  ON Semiconductor Rectifier & Schottky Diodes Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  Rectifier & Schottky Diodes Length 0.119" (3.04mm)  ON Semiconductor Rectifier & Schottky Diodes Length 0.119" (3.04mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Rectifier & Schottky Diodes Mounting Type Surface Mount  ON Semiconductor Rectifier & Schottky Diodes Mounting Type Surface Mount   Number of Pins 3  ON Semiconductor Number of Pins 3  Rectifier & Schottky Diodes Number of Pins 3  ON Semiconductor Rectifier & Schottky Diodes Number of Pins 3   Package Type TO-236AB  ON Semiconductor Package Type TO-236AB  Rectifier & Schottky Diodes Package Type TO-236AB  ON Semiconductor Rectifier & Schottky Diodes Package Type TO-236AB   Power Dissipation 200 mW  ON Semiconductor Power Dissipation 200 mW  Rectifier & Schottky Diodes Power Dissipation 200 mW  ON Semiconductor Rectifier & Schottky Diodes Power Dissipation 200 mW   Primary Type Schottky Barrier  ON Semiconductor Primary Type Schottky Barrier  Rectifier & Schottky Diodes Primary Type Schottky Barrier  ON Semiconductor Rectifier & Schottky Diodes Primary Type Schottky Barrier   Rectifier Type Switching  ON Semiconductor Rectifier Type Switching  Rectifier & Schottky Diodes Rectifier Type Switching  ON Semiconductor Rectifier & Schottky Diodes Rectifier Type Switching   Speed, Switching Fast  ON Semiconductor Speed, Switching Fast  Rectifier & Schottky Diodes Speed, Switching Fast  ON Semiconductor Rectifier & Schottky Diodes Speed, Switching Fast   Temperature, Junction, Maximum 125 °C  ON Semiconductor Temperature, Junction, Maximum 125 °C  Rectifier & Schottky Diodes Temperature, Junction, Maximum 125 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Junction, Maximum 125 °C   Temperature, Operating -55 to 125 °C  ON Semiconductor Temperature, Operating -55 to 125 °C  Rectifier & Schottky Diodes Temperature, Operating -55 to 125 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Operating -55 to 125 °C   Temperature, Operating, Maximum +125 °C  ON Semiconductor Temperature, Operating, Maximum +125 °C  Rectifier & Schottky Diodes Temperature, Operating, Maximum +125 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Operating, Maximum +125 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Rectifier & Schottky Diodes Temperature, Operating, Minimum -55 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +125 °C  ON Semiconductor Temperature, Operating, Range -55 to +125 °C  Rectifier & Schottky Diodes Temperature, Operating, Range -55 to +125 °C  ON Semiconductor Rectifier & Schottky Diodes Temperature, Operating, Range -55 to +125 °C   Time, Recovery 5 ns  ON Semiconductor Time, Recovery 5 ns  Rectifier & Schottky Diodes Time, Recovery 5 ns  ON Semiconductor Rectifier & Schottky Diodes Time, Recovery 5 ns   Time, Reverse Recovery 5 ns  ON Semiconductor Time, Reverse Recovery 5 ns  Rectifier & Schottky Diodes Time, Reverse Recovery 5 ns  ON Semiconductor Rectifier & Schottky Diodes Time, Reverse Recovery 5 ns   Voltage, Forward 0.8 V  ON Semiconductor Voltage, Forward 0.8 V  Rectifier & Schottky Diodes Voltage, Forward 0.8 V  ON Semiconductor Rectifier & Schottky Diodes Voltage, Forward 0.8 V   Voltage, Repetitive Peak 30 V  ON Semiconductor Voltage, Repetitive Peak 30 V  Rectifier & Schottky Diodes Voltage, Repetitive Peak 30 V  ON Semiconductor Rectifier & Schottky Diodes Voltage, Repetitive Peak 30 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  Rectifier & Schottky Diodes Width 0.055" (1.4mm)  ON Semiconductor Rectifier & Schottky Diodes Width 0.055" (1.4mm)  
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