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2N5195G - 

ON Semi 2N5195G PNP Bipolar Transistor, 4 A, 80 V, 3-Pin TO-225AA

ON Semiconductor 2N5195G
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制造商產(chǎn)品編號:
2N5195G
倉庫庫存編號:
70099758
技術(shù)數(shù)據(jù)表:
View 2N5195G Datasheet Datasheet
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2N5195G產(chǎn)品信息

  Brand/Series  2N Bipolar Series  
  Configuration  Common Base  
  Current, Collector  4 A  
  Current, Gain  7  
  Dimensions  7.80 x 3.00 x 11.10 mm  
  Frequency, Operating  2 MHz  
  Height  0.437" (11.1mm)  
  Length  0.307" (7.8mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-225  
  Polarity  PNP  
  Power Dissipation  40 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  3.12 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  PNP  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  80 V  
  Voltage, Collector to Base  80 V  
  Voltage, Collector to Emitter  80 V  
  Voltage, Collector to Emitter, Saturation  1.4 V  
  Voltage, Emitter to Base  5 V  
  Width  0.118" (3mm)  
關(guān)鍵詞         

2N5195G相關(guān)搜索

Brand/Series 2N Bipolar Series  ON Semiconductor Brand/Series 2N Bipolar Series  Bipolar Transistors Brand/Series 2N Bipolar Series  ON Semiconductor Bipolar Transistors Brand/Series 2N Bipolar Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 4 A  ON Semiconductor Current, Collector 4 A  Bipolar Transistors Current, Collector 4 A  ON Semiconductor Bipolar Transistors Current, Collector 4 A   Current, Gain 7  ON Semiconductor Current, Gain 7  Bipolar Transistors Current, Gain 7  ON Semiconductor Bipolar Transistors Current, Gain 7   Dimensions 7.80 x 3.00 x 11.10 mm  ON Semiconductor Dimensions 7.80 x 3.00 x 11.10 mm  Bipolar Transistors Dimensions 7.80 x 3.00 x 11.10 mm  ON Semiconductor Bipolar Transistors Dimensions 7.80 x 3.00 x 11.10 mm   Frequency, Operating 2 MHz  ON Semiconductor Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 2 MHz   Height 0.437" (11.1mm)  ON Semiconductor Height 0.437" (11.1mm)  Bipolar Transistors Height 0.437" (11.1mm)  ON Semiconductor Bipolar Transistors Height 0.437" (11.1mm)   Length 0.307" (7.8mm)  ON Semiconductor Length 0.307" (7.8mm)  Bipolar Transistors Length 0.307" (7.8mm)  ON Semiconductor Bipolar Transistors Length 0.307" (7.8mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-225  ON Semiconductor Package Type TO-225  Bipolar Transistors Package Type TO-225  ON Semiconductor Bipolar Transistors Package Type TO-225   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 40 W  ON Semiconductor Power Dissipation 40 W  Bipolar Transistors Power Dissipation 40 W  ON Semiconductor Bipolar Transistors Power Dissipation 40 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 3.12 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 3.12 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 3.12 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 3.12 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 80 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Base 80 V  ON Semiconductor Voltage, Collector to Base 80 V  Bipolar Transistors Voltage, Collector to Base 80 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 80 V   Voltage, Collector to Emitter 80 V  ON Semiconductor Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 1.4 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1.4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.4 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.4 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.118" (3mm)  ON Semiconductor Width 0.118" (3mm)  Bipolar Transistors Width 0.118" (3mm)  ON Semiconductor Bipolar Transistors Width 0.118" (3mm)  
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