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2N5087G - 

SS T092 LN XSTR PNP 50V -LEAD FREE

ON Semiconductor 2N5087G
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制造商產(chǎn)品編號(hào):
2N5087G
倉(cāng)庫(kù)庫(kù)存編號(hào):
70099756
技術(shù)數(shù)據(jù)表:
View 2N5087G Datasheet Datasheet
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2N5087G產(chǎn)品信息

  Brand/Series  2N Bipolar Series  
  Configuration  Common Base  
  Current, Collector  50 mA  
  Current, Gain  250  
  Dimensions  5.20 x 4.19 x 5.33 mm  
  Frequency, Operating  40 MHz  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  PNP  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  PNP  
  Type  Amplifier  
  Voltage, Breakdown, Collector to Emitter  50 V  
  Voltage, Collector to Base  50 V  
  Voltage, Collector to Emitter  50 V  
  Voltage, Collector to Emitter, Saturation  0.3 V  
  Voltage, Emitter to Base  3 V  
  Width  0.165" (4.19mm)  
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2N5087G相關(guān)搜索

Brand/Series 2N Bipolar Series  ON Semiconductor Brand/Series 2N Bipolar Series  Bipolar Transistors Brand/Series 2N Bipolar Series  ON Semiconductor Bipolar Transistors Brand/Series 2N Bipolar Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 50 mA  ON Semiconductor Current, Collector 50 mA  Bipolar Transistors Current, Collector 50 mA  ON Semiconductor Bipolar Transistors Current, Collector 50 mA   Current, Gain 250  ON Semiconductor Current, Gain 250  Bipolar Transistors Current, Gain 250  ON Semiconductor Bipolar Transistors Current, Gain 250   Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 4.19 x 5.33 mm  Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm   Frequency, Operating 40 MHz  ON Semiconductor Frequency, Operating 40 MHz  Bipolar Transistors Frequency, Operating 40 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 40 MHz   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  ON Semiconductor Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  ON Semiconductor Bipolar Transistors Length 0.204" (5.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 625 mW  ON Semiconductor Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  ON Semiconductor Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type Amplifier  ON Semiconductor Type Amplifier  Bipolar Transistors Type Amplifier  ON Semiconductor Bipolar Transistors Type Amplifier   Voltage, Breakdown, Collector to Emitter 50 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 50 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 50 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 50 V   Voltage, Collector to Base 50 V  ON Semiconductor Voltage, Collector to Base 50 V  Bipolar Transistors Voltage, Collector to Base 50 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 50 V   Voltage, Collector to Emitter 50 V  ON Semiconductor Voltage, Collector to Emitter 50 V  Bipolar Transistors Voltage, Collector to Emitter 50 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 50 V   Voltage, Collector to Emitter, Saturation 0.3 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.3 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.3 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.3 V   Voltage, Emitter to Base 3 V  ON Semiconductor Voltage, Emitter to Base 3 V  Bipolar Transistors Voltage, Emitter to Base 3 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 3 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Bipolar Transistors Width 0.165" (4.19mm)  ON Semiconductor Bipolar Transistors Width 0.165" (4.19mm)  
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