Brand/Series
Transistor Series
Configuration
Common Base
Current, Collector
12 A
Current, Gain
20
Dimensions
15.62 x 4.82 x 20.0 mm
Frequency, Operating
15 MHz
Gain, DC Current, Maximum
200
Gain, DC Current, Minimum
60
Height
0.787" (20mm)
Length
0.614" (15.62mm)
Material
Si
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-3P
Polarity
NPN
Power Dissipation
100 W
Primary Type
Si
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Range
Maximum of +150 °C
Transistor Type
NPN
Type
AF, Amplifier, High Current
Voltage, Breakdown, Collector to Emitter
140 V
Voltage, Collector to Base
160 V
Voltage, Collector to Emitter
140 V
Voltage, Collector to Emitter, Saturation
2.5 V
Voltage, Emitter to Base
6 V
Voltage, Saturation, Collector to Emitter
0.6 V
Width
0.19" (4.82mm)
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