Brand/Series |
Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
1 A |
|
Current, Continuous Collector |
1 A |
|
Current, Gain |
5 |
|
Device Dissipation |
10 W |
|
Diameter |
9.39 mm |
|
Dimensions |
9.39 Dia. x 6.6 H mm |
|
Frequency, Operating |
30 MHz |
|
Gain, DC Current, Maximum |
5 @ 1 A |
|
Gain, DC Current, Minimum |
40 @ 250 mA |
|
Height |
0.26" (6.6mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-39 |
|
Polarity |
NPN |
|
Power Dissipation |
10 W |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
17.4 °C/W |
|
Temperature Range, Junction, Operating |
200 °C |
|
Temperature, Operating, Maximum |
+200 °C |
|
Temperature, Operating, Range |
Maximum of +200 °C |
|
Thermal Resistance, Junction to Ambient |
175 °C⁄W |
|
Transistor Polarity |
NPN |
|
Transistor Type |
NPN |
|
Type |
Driver, Power |
|
Voltage, Breakdown, Collector to Emitter |
120 V |
|
Voltage, Collector to Base |
120 V |
|
Voltage, Collector to Emitter |
120 V |
|
Voltage, Collector to Emitter, Saturation |
2 V |
|
Voltage, Emitter to Base |
4 V |
|
關(guān)鍵詞 |