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NTE311 - 

TRANSISTOR NPN SILICON 55V IC=0.4A TO-39 CASE OSC, VHF-UHF PRE-DRIVER TO-39 CASE

NTE Electronics, Inc. NTE311
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制造商產品編號:
NTE311
倉庫庫存編號:
70215758
技術數(shù)據(jù)表:
View NTE311 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產品數(shù)據(jù)庫龐大,部分產品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

NTE311產品概述

Silicon NPN Transistors

NTE311產品信息

  Brand/Series  Transistor Series  
  Complement to  PNP  
  Configuration  Common Base  
  Current, Collector  400 mA  
  Current, Continuous Collector  400 mA  
  Current, Gain  25  
  Device Dissipation  50 W  
  Diameter  9.39 mm  
  Dimensions  9.39 Dia. x 6.6 H mm  
  Frequency, Operating  800 MHz  
  Gain, DC Current, Maximum  200  
  Gain, DC Current, Minimum  25  
  Height  0.26" (6.6mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-39  
  Polarity  NPN  
  Power Dissipation  5 W  
  Primary Type  Si  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Driver, Frequency Multiplier, VHF/UHF  
  Voltage, Breakdown, Collector to Emitter  55 V  
  Voltage, Collector to Base  55 V  
  Voltage, Collector to Emitter  30 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  3.5 V  
關鍵詞         

NTE311相關搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 400 mA  NTE Electronics, Inc. Current, Collector 400 mA  Bipolar Transistors Current, Collector 400 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 400 mA   Current, Continuous Collector 400 mA  NTE Electronics, Inc. Current, Continuous Collector 400 mA  Bipolar Transistors Current, Continuous Collector 400 mA  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 400 mA   Current, Gain 25  NTE Electronics, Inc. Current, Gain 25  Bipolar Transistors Current, Gain 25  NTE Electronics, Inc. Bipolar Transistors Current, Gain 25   Device Dissipation 50 W  NTE Electronics, Inc. Device Dissipation 50 W  Bipolar Transistors Device Dissipation 50 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 50 W   Diameter 9.39 mm  NTE Electronics, Inc. Diameter 9.39 mm  Bipolar Transistors Diameter 9.39 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 9.39 mm   Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Dimensions 9.39 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm   Frequency, Operating 800 MHz  NTE Electronics, Inc. Frequency, Operating 800 MHz  Bipolar Transistors Frequency, Operating 800 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 800 MHz   Gain, DC Current, Maximum 200  NTE Electronics, Inc. Gain, DC Current, Maximum 200  Bipolar Transistors Gain, DC Current, Maximum 200  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 200   Gain, DC Current, Minimum 25  NTE Electronics, Inc. Gain, DC Current, Minimum 25  Bipolar Transistors Gain, DC Current, Minimum 25  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 25   Height 0.26" (6.6mm)  NTE Electronics, Inc. Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.26" (6.6mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-39  NTE Electronics, Inc. Package Type TO-39  Bipolar Transistors Package Type TO-39  NTE Electronics, Inc. Bipolar Transistors Package Type TO-39   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 5 W  NTE Electronics, Inc. Power Dissipation 5 W  Bipolar Transistors Power Dissipation 5 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 5 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Driver, Frequency Multiplier, VHF/UHF  NTE Electronics, Inc. Type Driver, Frequency Multiplier, VHF/UHF  Bipolar Transistors Type Driver, Frequency Multiplier, VHF/UHF  NTE Electronics, Inc. Bipolar Transistors Type Driver, Frequency Multiplier, VHF/UHF   Voltage, Breakdown, Collector to Emitter 55 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 55 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 55 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 55 V   Voltage, Collector to Base 55 V  NTE Electronics, Inc. Voltage, Collector to Base 55 V  Bipolar Transistors Voltage, Collector to Base 55 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 55 V   Voltage, Collector to Emitter 30 V  NTE Electronics, Inc. Voltage, Collector to Emitter 30 V  Bipolar Transistors Voltage, Collector to Emitter 30 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 30 V   Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 3.5 V  NTE Electronics, Inc. Voltage, Emitter to Base 3.5 V  Bipolar Transistors Voltage, Emitter to Base 3.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 3.5 V  
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