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NTE2394 - 

POWER MOSFET N-CHANNEL 500V ID=14A TO-3P CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2394
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制造商產(chǎn)品編號：
NTE2394
倉庫庫存編號：
70215907
技術(shù)數(shù)據(jù)表：
View NTE2394 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

NTE2394產(chǎn)品概述

N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 14 A @ +25 °C
  • High voltage: 450 V for off-line SMPS
  • High current: 12 A for up to 350 W SMPS
  • Ultra fast switching for operation at less than 100 kHz
    The NTE2394 is an N-channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

    • NTE2394產(chǎn)品信息

      Application  Switching mode power supplies, uninterruptible power supplies and motor speed control  
      Brand/Series  MOSFET Series  
      Capacitance, Input  3000 pF @25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  14 A  
      Dimensions  15.62 x 4.82 x 20 mm  
      Fall Time  70 ns (Max.)  
      Gate Charge, Total  120 nC  
      Height  0.787" (20mm)  
      Length  0.614" (15.62mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-3P  
      Polarization  N-Channel  
      Power Dissipation  180 W  
      Resistance, Drain to Source On  0.4 Ω  
      Resistance, Thermal, Junction to Case  0.69 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  30 °C⁄W  
      Time, Turn-Off Delay  150 ns  
      Time, Turn-On Delay  35 ns  
      Transconductance, Forward  9.3 S  
      Typical Gate Charge @ Vgs  Maximum of 120 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  500 V  
      Voltage, Drain to Source  500 V  
      Voltage, Forward, Diode  1.4 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.19" (4.82mm)  
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    NTE2394相關(guān)搜索

    Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. Application Switching mode power supplies, uninterruptible power supplies and motor speed control  MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control   Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 3000 pF @25 V  NTE Electronics, Inc. Capacitance, Input 3000 pF @25 V  MOSFET Transistors Capacitance, Input 3000 pF @25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 3000 pF @25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel 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Electronics, Inc. Gate Charge, Total 120 nC  MOSFET Transistors Gate Charge, Total 120 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 120 nC   Height 0.787" (20mm)  NTE Electronics, Inc. Height 0.787" (20mm)  MOSFET Transistors Height 0.787" (20mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.787" (20mm)   Length 0.614" (15.62mm)  NTE Electronics, Inc. Length 0.614" (15.62mm)  MOSFET Transistors Length 0.614" (15.62mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.614" (15.62mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number 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Transistors Resistance, Drain to Source On 0.4 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.4 Ω   Resistance, Thermal, Junction to Case 0.69 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.69 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.69 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 0.69 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 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Inc. MOSFET Transistors Transconductance, Forward 9.3 S   Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 120 nC @ 10 V   Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 1.4 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.4 V  MOSFET Transistors Voltage, Forward, Diode 1.4 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.4 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.82mm)  NTE Electronics, Inc. Width 0.19" (4.82mm)  MOSFET Transistors Width 0.19" (4.82mm)  NTE Electronics, Inc. MOSFET Transistors Width 0.19" (4.82mm)  
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