amphenol代理商
專業(yè)銷售Amphenol(安費諾)全系列產(chǎn)品-英國2號倉庫
美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

在本站結(jié)果里搜索:    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE2382 - 

POWER MOSFET N-CHANNEL 100V ID=8A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2382
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
NTE2382
倉庫庫存編號:
70215355
技術(shù)數(shù)據(jù)表:
View NTE2382 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

NTE2382產(chǎn)品概述

N Channel Enhancement Mode Switches

NTE2382產(chǎn)品信息

  Brand/Series  MOSFET Series  
  Capacitance, Input  400 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  9.2 A  
  Gate Charge, Total  23 nC  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Polarization  N-Channel  
  Power Dissipation  50 W  
  Resistance, Drain to Source On  0.27 Ω  
  Resistance, Thermal, Junction to Case  2.5 °C⁄W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  19 ns  
  Time, Turn-On Delay  8.8 ns  
  Transconductance, Forward  4.1 S  
  Typical Gate Charge @ Vgs  Maximum of 23 nC @ 10 V  
  Voltage, Breakdown, Drain to Source  100 V  
  Voltage, Drain to Source  100 V  
  Voltage, Forward, Diode  2.5 V  
  Voltage, Gate to Source  ±20 V  
關(guān)鍵詞         

NTE2382客戶還搜索了

  • 參考圖片
  • 制造商 / 說明 / 型號 / 倉庫庫存編號
  • PDF
  • 操作

NTE2382相關(guān)搜索

Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 400 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 400 pF @ 25 V  MOSFET Transistors Capacitance, Input 400 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 400 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 9.2 A  NTE Electronics, Inc. Current, Drain 9.2 A  MOSFET Transistors Current, Drain 9.2 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 9.2 A   Gate Charge, Total 23 nC  NTE Electronics, Inc. Gate Charge, Total 23 nC  MOSFET Transistors Gate Charge, Total 23 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 23 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 50 W  NTE Electronics, Inc. Power Dissipation 50 W  MOSFET Transistors Power Dissipation 50 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 50 W   Resistance, Drain to Source On 0.27 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.27 Ω  MOSFET Transistors Resistance, Drain to Source On 0.27 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.27 Ω   Resistance, Thermal, Junction to Case 2.5 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 2.5 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 2.5 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 19 ns  NTE Electronics, Inc. Time, Turn-Off Delay 19 ns  MOSFET Transistors Time, Turn-Off Delay 19 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 19 ns   Time, Turn-On Delay 8.8 ns  NTE Electronics, Inc. Time, Turn-On Delay 8.8 ns  MOSFET Transistors Time, Turn-On Delay 8.8 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 8.8 ns   Transconductance, Forward 4.1 S  NTE Electronics, Inc. Transconductance, Forward 4.1 S  MOSFET Transistors Transconductance, Forward 4.1 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 4.1 S   Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 23 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. Voltage, Forward, Diode 2.5 V  MOSFET Transistors Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 2.5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
電話:400-900-3095
QQ:800152669
關(guān)于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們
Copyright © 2017 habitrun.com All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書號:粵ICP備11103613號