Brand/Series |
Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
0.2 A |
|
Current, Gain |
20 |
|
Device Dissipation |
7 W |
|
Diameter |
9.39 mm |
|
Dimensions |
9.39 Dia. x 6.6 H mm |
|
Frequency, Operating |
50 MHz |
|
Gain, DC Current, Minimum |
20 |
|
Height |
0.26" (6.6mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-39 |
|
Polarity |
NPN |
|
Power Dissipation |
7 W |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
25 °C⁄W |
|
Temperature, Junction, Operating |
0 to +200 °C |
|
Temperature, Operating, Maximum |
+200 °C |
|
Temperature, Operating, Range |
Maximum of +200 °C |
|
Thermal Resistance, Junction to Ambient |
175 °C⁄W |
|
Transistor Polarity |
NPN |
|
Transistor Type |
NPN |
|
Type |
High Voltage |
|
Voltage, Breakdown, Collector to Emitter |
300 V |
|
Voltage, Collector to Base |
300 V |
|
Voltage, Collector to Emitter |
300 V |
|
Voltage, Collector to Emitter, Saturation |
1 V |
|
Voltage, Emitter to Base |
7 V |
|
Voltage, Saturation, Base to Emitter |
0.85 V |
|
關(guān)鍵詞 |