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NTE108-1 - 

TRANSISTOR NPN SILICON 30V 0.05A TO-106RF/IF AMP

NTE Electronics, Inc. NTE108-1
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制造商產(chǎn)品編號(hào):
NTE108-1
倉(cāng)庫(kù)庫(kù)存編號(hào):
70214742
技術(shù)數(shù)據(jù)表:
View NTE108-1 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE108-1產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  50 mA  
  Current, Gain  20  
  Diameter  5.28 mm  
  Dimensions  5.28 Dia. x 4.57 H mm  
  Frequency, Operating  600 MHz  
  Height  0.18" (4.57mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-106  
  Polarity  NPN  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Amplifier, High Frequency  
  Voltage, Breakdown, Collector to Emitter  15 V  
  Voltage, Collector to Base  30 V  
  Voltage, Collector to Emitter  15 V  
  Voltage, Collector to Emitter, Saturation  0.4 V  
  Voltage, Emitter to Base  3 V  
  Voltage, Saturation, Base to Emitter  1 V  
關(guān)鍵詞         

NTE108-1相關(guān)搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 50 mA  NTE Electronics, Inc. Current, Collector 50 mA  Bipolar Transistors Current, Collector 50 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 50 mA   Current, Gain 20  NTE Electronics, Inc. Current, Gain 20  Bipolar Transistors Current, Gain 20  NTE Electronics, Inc. Bipolar Transistors Current, Gain 20   Diameter 5.28 mm  NTE Electronics, Inc. Diameter 5.28 mm  Bipolar Transistors Diameter 5.28 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 5.28 mm   Dimensions 5.28 Dia. x 4.57 H mm  NTE Electronics, Inc. Dimensions 5.28 Dia. x 4.57 H mm  Bipolar Transistors Dimensions 5.28 Dia. x 4.57 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.28 Dia. x 4.57 H mm   Frequency, Operating 600 MHz  NTE Electronics, Inc. Frequency, Operating 600 MHz  Bipolar Transistors Frequency, Operating 600 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 600 MHz   Height 0.18" (4.57mm)  NTE Electronics, Inc. Height 0.18" (4.57mm)  Bipolar Transistors Height 0.18" (4.57mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.18" (4.57mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-106  NTE Electronics, Inc. Package Type TO-106  Bipolar Transistors Package Type TO-106  NTE Electronics, Inc. Bipolar Transistors Package Type TO-106   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 625 mW  NTE Electronics, Inc. Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, High Frequency  NTE Electronics, Inc. Type Amplifier, High Frequency  Bipolar Transistors Type Amplifier, High Frequency  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, High Frequency   Voltage, Breakdown, Collector to Emitter 15 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 15 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 15 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 15 V   Voltage, Collector to Base 30 V  NTE Electronics, Inc. Voltage, Collector to Base 30 V  Bipolar Transistors Voltage, Collector to Base 30 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 30 V   Voltage, Collector to Emitter 15 V  NTE Electronics, Inc. Voltage, Collector to Emitter 15 V  Bipolar Transistors Voltage, Collector to Emitter 15 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 15 V   Voltage, Collector to Emitter, Saturation 0.4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V   Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Voltage, Emitter to Base 3 V  Bipolar Transistors Voltage, Emitter to Base 3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 3 V   Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V  
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