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NTE106 - 

TRANSISTOR PNP SILICON 15V 0.2A TO-18 AMP/OSCILLATOR HI SPEED SWITCH

NTE Electronics, Inc. NTE106
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制造商產(chǎn)品編號(hào):
NTE106
倉(cāng)庫(kù)庫(kù)存編號(hào):
70214599
技術(shù)數(shù)據(jù)表:
View NTE106 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

NTE106產(chǎn)品概述

0.36 W Power Dissipation, -65 to +200 °C Operating Temperature, Silicon PNP Transistors
Silicon PNP transistor is an switching transistor.

NTE106產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  200 mA  
  Current, Gain  20  
  Diameter  5.84 mm  
  Dimensions  5.84 Dia. x 5.33 H mm  
  Frequency, Operating  1100 MHz  
  Height  0.21" (5.33mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-18  
  Polarity  PNP  
  Power Dissipation  1.2 W  
  Primary Type  Si  
  Temperature, Junction, Maximum  200 °C  
  Temperature, Junction, Minimum  -65 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Type  PNP  
  Type  Switch  
  Voltage, Breakdown, Collector to Emitter  15 V  
  Voltage, Collector to Base  15 V  
  Voltage, Collector to Emitter  15 V  
  Voltage, Collector to Emitter, Saturation  0.18 V  
  Voltage, Emitter to Base  4.5 V  
  Voltage, Saturation, Base to Emitter  1.5 V  
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NTE106相關(guān)搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 200 mA  NTE Electronics, Inc. Current, Collector 200 mA  Bipolar Transistors Current, Collector 200 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 200 mA   Current, Gain 20  NTE Electronics, Inc. Current, Gain 20  Bipolar Transistors Current, Gain 20  NTE Electronics, Inc. Bipolar Transistors Current, Gain 20   Diameter 5.84 mm  NTE Electronics, Inc. Diameter 5.84 mm  Bipolar Transistors Diameter 5.84 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 5.84 mm   Dimensions 5.84 Dia. x 5.33 H mm  NTE Electronics, Inc. Dimensions 5.84 Dia. x 5.33 H mm  Bipolar Transistors Dimensions 5.84 Dia. x 5.33 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.84 Dia. x 5.33 H mm   Frequency, Operating 1100 MHz  NTE Electronics, Inc. Frequency, Operating 1100 MHz  Bipolar Transistors Frequency, Operating 1100 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 1100 MHz   Height 0.21" (5.33mm)  NTE Electronics, Inc. Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.21" (5.33mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-18  NTE Electronics, Inc. Package Type TO-18  Bipolar Transistors Package Type TO-18  NTE Electronics, Inc. Bipolar Transistors Package Type TO-18   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 1.2 W  NTE Electronics, Inc. Power Dissipation 1.2 W  Bipolar Transistors Power Dissipation 1.2 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 1.2 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature, Junction, Maximum 200 °C  NTE Electronics, Inc. Temperature, Junction, Maximum 200 °C  Bipolar 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Inc. Voltage, Collector to Emitter 15 V  Bipolar Transistors Voltage, Collector to Emitter 15 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 15 V   Voltage, Collector to Emitter, Saturation 0.18 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.18 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.18 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.18 V   Voltage, Emitter to Base 4.5 V  NTE Electronics, Inc. Voltage, Emitter to Base 4.5 V  Bipolar Transistors Voltage, Emitter to Base 4.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 4.5 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  
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