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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRLR120NPBF

IRLR120NPBF -

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ohm; ID 10A; D-Pak (TO-252AA); PD 48W

International Rectifier IRLR120NPBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產(chǎn)品編號：: IRLR120NPBF
倉庫庫存編號：: 70017112
技術數(shù)據(jù)表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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IRLR120NPBF產(chǎn)品概述

N-Channel Power MOSFET 8A to 12A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRLR120NPBF相關搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 440 pF @ 25 V International Rectifier Capacitance, Input 440 pF @ 25 V MOSFET Transistors Capacitance, Input 440 pF @ 25 V International Rectifier MOSFET Transistors Capacitance, Input 440 pF @ 25 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N International Rectifier Channel Type N MOSFET Transistors Channel Type N International Rectifier MOSFET Transistors Channel Type N Configuration Dual Drain International Rectifier Configuration Dual Drain MOSFET Transistors Configuration Dual Drain International Rectifier MOSFET Transistors Configuration Dual Drain Current, Drain 10 A International Rectifier Current, Drain 10 A MOSFET Transistors Current, Drain 10 A International Rectifier MOSFET Transistors Current, Drain 10 A Dimensions 6.73 x 6.22 x 2.39 mm International Rectifier Dimensions 6.73 x 6.22 x 2.39 mm MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm Gate Charge, Total 20 nC International Rectifier Gate Charge, Total 20 nC MOSFET Transistors Gate Charge, Total 20 nC International Rectifier MOSFET Transistors Gate Charge, Total 20 nC Height 0.094" (2.39mm) International Rectifier Height 0.094" (2.39mm) MOSFET Transistors Height 0.094" (2.39mm) International Rectifier MOSFET Transistors Height 0.094" (2.39mm) Length 0.264" (6.73mm) International Rectifier Length 0.264" (6.73mm) MOSFET Transistors Length 0.264" (6.73mm) International Rectifier MOSFET Transistors Length 0.264" (6.73mm) Mounting Type Surface Mount International Rectifier Mounting Type Surface Mount MOSFET Transistors Mounting Type Surface Mount International Rectifier MOSFET Transistors Mounting Type Surface Mount Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 International Rectifier Number of Pins 3 MOSFET Transistors Number of Pins 3 International Rectifier MOSFET Transistors Number of Pins 3 Package Type DPAK International Rectifier Package Type DPAK MOSFET Transistors Package Type DPAK International Rectifier MOSFET Transistors Package Type DPAK Polarization N-Channel International Rectifier Polarization N-Channel MOSFET Transistors Polarization N-Channel International Rectifier MOSFET Transistors Polarization N-Channel Power Dissipation 48 W International Rectifier Power Dissipation 48 W MOSFET Transistors Power Dissipation 48 W International Rectifier MOSFET Transistors Power Dissipation 48 W Resistance, Drain to Source On 0.265 Ω International Rectifier Resistance, Drain to Source On 0.265 Ω MOSFET Transistors Resistance, Drain to Source On 0.265 Ω International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.265 Ω Temperature, Operating, Maximum +175 °C International Rectifier Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +175 °C International Rectifier Temperature, Operating, Range -55 to +175 °C MOSFET Transistors Temperature, Operating, Range -55 to +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C Time, Turn-Off Delay 23 ns International Rectifier Time, Turn-Off Delay 23 ns MOSFET Transistors Time, Turn-Off Delay 23 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 23 ns Time, Turn-On Delay 4 ns International Rectifier Time, Turn-On Delay 4 ns MOSFET Transistors Time, Turn-On Delay 4 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 4 ns Transconductance, Forward 3.1 sec International Rectifier Transconductance, Forward 3.1 sec MOSFET Transistors Transconductance, Forward 3.1 sec International Rectifier MOSFET Transistors Transconductance, Forward 3.1 sec Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V International Rectifier Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 20 nC @ 5 V Voltage, Breakdown, Drain to Source 100 V International Rectifier Voltage, Breakdown, Drain to Source 100 V MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V Voltage, Drain to Source 100 V International Rectifier Voltage, Drain to Source 100 V MOSFET Transistors Voltage, Drain to Source 100 V International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V Voltage, Forward, Diode 1.3 V International Rectifier Voltage, Forward, Diode 1.3 V MOSFET Transistors Voltage, Forward, Diode 1.3 V International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V Voltage, Gate to Source ±16 V International Rectifier Voltage, Gate to Source ±16 V MOSFET Transistors Voltage, Gate to Source ±16 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±16 V Width 0.245" (6.22mm) International Rectifier Width 0.245" (6.22mm) MOSFET Transistors Width 0.245" (6.22mm) International Rectifier MOSFET Transistors Width 0.245" (6.22mm)

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