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70084122
IM21-14-CDTRI
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IRLL024NTRPBF
IRLL024NTRPBF -
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRLL024NTRPBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017816
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRLL024NTRPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRLL024NTRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
510 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Drain
4.4 A
Dimensions
6.70 x 3.70 x 1.45 mm
Gate Charge, Total
10.4 nC
Height
0.057" (1.45mm)
Length
0.263" (6.7mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
SOT-223
Polarization
N-Channel
Power Dissipation
2.1 W
Resistance, Drain to Source On
0.1 Ω
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
18 ns
Time, Turn-On Delay
7.4 ns
Transconductance, Forward
3.3 S
Typical Gate Charge @ Vgs
10.4 nC @ 5 V
Voltage, Breakdown, Drain to Source
55 V
Voltage, Drain to Source
55 V
Voltage, Forward, Diode
1 V
Voltage, Gate to Source
±16 V
Width
0.146" (3.7mm)
關(guān)鍵詞
IRLL024NTRPBF客戶還搜索了
參考圖片
制造商 / 說(shuō)明 / 型號(hào) / 倉(cāng)庫(kù)庫(kù)存編號(hào)
PDF
操作
Coiltronics
Inductor; Power Shielded Drum Core Inductor; 47uH; 1.14A
型號(hào):
DR73-470-R
倉(cāng)庫(kù)庫(kù)存編號(hào):
70037897
搜索
Coiltronics
Inductor; Power Shielded Drum Core Inductor; 6.8uH; 3.12A
型號(hào):
DR73-6R8-R
倉(cāng)庫(kù)庫(kù)存編號(hào):
70037900
搜索
Coiltronics
Inductor; Power Shielded Drum Core Inductor; 6.8uH; 3.12A
型號(hào):
DR73-6R8-R
倉(cāng)庫(kù)庫(kù)存編號(hào):
70037900
搜索
Coiltronics
Inductor; Power Shielded Drum Core Inductor; 33uH; 6.22A
型號(hào):
DR127-330-R
倉(cāng)庫(kù)庫(kù)存編號(hào):
70037927
搜索
VCC (Visual Communications Company)
LED SUPER RED CLEAR 0805 SMD
型號(hào):
CMD17-21SRC/TR8
倉(cāng)庫(kù)庫(kù)存編號(hào):
70130081
搜索
VCC (Visual Communications Company)
LED GREEN CLEAR 0805 SMD
型號(hào):
CMD17-21VGC/TR8
倉(cāng)庫(kù)庫(kù)存編號(hào):
70130088
搜索
Northern Technologies
connector, d-sub, right angle pcb receptacle(female), 9 contact, 4-40 screwlocks
型號(hào):
DRE9ST2S
倉(cāng)庫(kù)庫(kù)存編號(hào):
70172295
搜索
Vishay Dale
Resistor; Network; Res 5K/5K Ohms; Pwr-Rtg0.2 W; Tol 0.1%; SMT; SOT-23; Ratio 0.05%
型號(hào):
MPMT1002AT1
倉(cāng)庫(kù)庫(kù)存編號(hào):
70229994
搜索
IRLL024NTRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 510 pF @ 25 V
International Rectifier Capacitance, Input 510 pF @ 25 V
MOSFET Transistors Capacitance, Input 510 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 510 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 4.4 A
International Rectifier Current, Drain 4.4 A
MOSFET Transistors Current, Drain 4.4 A
International Rectifier MOSFET Transistors Current, Drain 4.4 A
Dimensions 6.70 x 3.70 x 1.45 mm
International Rectifier Dimensions 6.70 x 3.70 x 1.45 mm
MOSFET Transistors Dimensions 6.70 x 3.70 x 1.45 mm
International Rectifier MOSFET Transistors Dimensions 6.70 x 3.70 x 1.45 mm
Gate Charge, Total 10.4 nC
International Rectifier Gate Charge, Total 10.4 nC
MOSFET Transistors Gate Charge, Total 10.4 nC
International Rectifier MOSFET Transistors Gate Charge, Total 10.4 nC
Height 0.057" (1.45mm)
International Rectifier Height 0.057" (1.45mm)
MOSFET Transistors Height 0.057" (1.45mm)
International Rectifier MOSFET Transistors Height 0.057" (1.45mm)
Length 0.263" (6.7mm)
International Rectifier Length 0.263" (6.7mm)
MOSFET Transistors Length 0.263" (6.7mm)
International Rectifier MOSFET Transistors Length 0.263" (6.7mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type SOT-223
International Rectifier Package Type SOT-223
MOSFET Transistors Package Type SOT-223
International Rectifier MOSFET Transistors Package Type SOT-223
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 2.1 W
International Rectifier Power Dissipation 2.1 W
MOSFET Transistors Power Dissipation 2.1 W
International Rectifier MOSFET Transistors Power Dissipation 2.1 W
Resistance, Drain to Source On 0.1 Ω
International Rectifier Resistance, Drain to Source On 0.1 Ω
MOSFET Transistors Resistance, Drain to Source On 0.1 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.1 Ω
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 18 ns
International Rectifier Time, Turn-Off Delay 18 ns
MOSFET Transistors Time, Turn-Off Delay 18 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 18 ns
Time, Turn-On Delay 7.4 ns
International Rectifier Time, Turn-On Delay 7.4 ns
MOSFET Transistors Time, Turn-On Delay 7.4 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 7.4 ns
Transconductance, Forward 3.3 S
International Rectifier Transconductance, Forward 3.3 S
MOSFET Transistors Transconductance, Forward 3.3 S
International Rectifier MOSFET Transistors Transconductance, Forward 3.3 S
Typical Gate Charge @ Vgs 10.4 nC @ 5 V
International Rectifier Typical Gate Charge @ Vgs 10.4 nC @ 5 V
MOSFET Transistors Typical Gate Charge @ Vgs 10.4 nC @ 5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 10.4 nC @ 5 V
Voltage, Breakdown, Drain to Source 55 V
International Rectifier Voltage, Breakdown, Drain to Source 55 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V
Voltage, Drain to Source 55 V
International Rectifier Voltage, Drain to Source 55 V
MOSFET Transistors Voltage, Drain to Source 55 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V
Voltage, Forward, Diode 1 V
International Rectifier Voltage, Forward, Diode 1 V
MOSFET Transistors Voltage, Forward, Diode 1 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1 V
Voltage, Gate to Source ±16 V
International Rectifier Voltage, Gate to Source ±16 V
MOSFET Transistors Voltage, Gate to Source ±16 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±16 V
Width 0.146" (3.7mm)
International Rectifier Width 0.146" (3.7mm)
MOSFET Transistors Width 0.146" (3.7mm)
International Rectifier MOSFET Transistors Width 0.146" (3.7mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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