Brand/Series |
HEXFET Series |
|
Capacitance, Input |
230 pF @ 25 V |
|
Channel Mode |
Enhancement |
|
Channel Type |
N |
|
Configuration |
Single |
|
Current, Drain |
2.8 A |
|
Dimensions |
6.70 x 3.70 x 1.45 mm |
|
Gate Charge, Total |
9.5 nC |
|
Height |
0.057" (1.45mm) |
|
Length |
0.263" (6.7mm) |
|
Mounting Type |
Surface Mount |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
SOT-223 |
|
Polarization |
N-Channel |
|
Power Dissipation |
2.1 W |
|
Resistance, Drain to Source On |
0.28 Ω |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-55 °C |
|
Temperature, Operating, Range |
-55 to +150 °C |
|
Time, Turn-Off Delay |
14 ns |
|
Time, Turn-On Delay |
5.1 ns |
|
Transconductance, Forward |
2.3 S |
|
Typical Gate Charge @ Vgs |
9.5 nC @ 10 V |
|
Voltage, Breakdown, Drain to Source |
55 V |
|
Voltage, Drain to Source |
55 V |
|
Voltage, Forward, Diode |
1 V |
|
Voltage, Gate to Source |
±16 V |
|
Width |
0.146" (3.7mm) |
|
關(guān)鍵詞 |