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IRG4PH30KPBF - 

1200V ULTRAFAST 4-20 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE

International Rectifier IRG4PH30KPBF
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制造商產(chǎn)品編號：
IRG4PH30KPBF
倉庫庫存編號：
70017609
技術數(shù)據(jù)表：
View IRG4PH30KPBF Datasheet Datasheet
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IRG4PH30KPBF產(chǎn)品概述

Single IGBT up to 20A, Infineon
optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs

IRG4PH30KPBF產(chǎn)品信息

  Capacitance, Gate  800 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  20 A  
  Current, Continuous Collector  20 A  
  Dimensions  15.87 X 5.31 X 20.70 mm  
  Energy Rating  121 mJ  
  Height  0.815" (20.7mm)  
  Length  0.625" <5/8> (15.875mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-247AC  
  Polarity  N-Channel  
  Power Dissipation  100 W  
  Resistance, Thermal, Junction to Case  1.2 °C/W  
  Speed, Switching  30 kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Ultrafast  
  Voltage, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.209" (5.31mm)  
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IRG4PH30KPBF相關搜索

Capacitance, Gate 800 pF  International Rectifier Capacitance, Gate 800 pF  IGBT Transistors Capacitance, Gate 800 pF  International Rectifier IGBT Transistors Capacitance, Gate 800 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 20 A  International Rectifier Current, Collector 20 A  IGBT Transistors Current, Collector 20 A  International Rectifier IGBT Transistors Current, Collector 20 A   Current, Continuous Collector 20 A  International Rectifier Current, Continuous Collector 20 A  IGBT Transistors Current, Continuous Collector 20 A  International Rectifier IGBT Transistors Current, Continuous Collector 20 A   Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm  IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm   Energy Rating 121 mJ  International Rectifier Energy Rating 121 mJ  IGBT Transistors Energy Rating 121 mJ  International Rectifier IGBT Transistors Energy Rating 121 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 100 W  International Rectifier Power Dissipation 100 W  IGBT Transistors Power Dissipation 100 W  International Rectifier IGBT Transistors Power Dissipation 100 W   Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier Resistance, Thermal, Junction to Case 1.2 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W   Speed, Switching 30 kHz  International Rectifier Speed, Switching 30 kHz  IGBT Transistors Speed, Switching 30 kHz  International Rectifier IGBT Transistors Speed, Switching 30 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 1200 V  International Rectifier Voltage, Collector to Emitter 1200 V  IGBT Transistors Voltage, Collector to Emitter 1200 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  International Rectifier Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistors Voltage, Collector to Emitter Shorted 1200 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)  
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