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IRG4PC50UPBF
IRG4PC50UPBF -
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRG4PC50UPBF
倉庫庫存編號(hào):
70017076
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRG4PC50UPBF產(chǎn)品概述
Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's
IRG4PC50UPBF產(chǎn)品信息
Capacitance, Gate
4000 pF
Channel Type
N
Configuration
Single
Current, Collector
55 A
Current, Continuous Collector
55 A
Dimensions
15.87 X 5.31 X 20.70 mm
Energy Rating
20 mJ
Height
0.815" (20.7mm)
Length
0.625" <5/8> (15.875mm)
Mounting Type
Through Hole
Number of Pins
3
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction to Case
0.64 °C/W
Speed, Switching
8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Transistor Type
NPN
Type
Ultrafast
Voltage, Collector to Emitter
600 V
Voltage, Collector to Emitter Shorted
600 V
Voltage, Gate to Emitter
±20 V
Width
0.209" (5.31mm)
關(guān)鍵詞
IRG4PC50UPBF相關(guān)搜索
Capacitance, Gate 4000 pF
International Rectifier Capacitance, Gate 4000 pF
IGBT Transistors Capacitance, Gate 4000 pF
International Rectifier IGBT Transistors Capacitance, Gate 4000 pF
Channel Type N
International Rectifier Channel Type N
IGBT Transistors Channel Type N
International Rectifier IGBT Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
IGBT Transistors Configuration Single
International Rectifier IGBT Transistors Configuration Single
Current, Collector 55 A
International Rectifier Current, Collector 55 A
IGBT Transistors Current, Collector 55 A
International Rectifier IGBT Transistors Current, Collector 55 A
Current, Continuous Collector 55 A
International Rectifier Current, Continuous Collector 55 A
IGBT Transistors Current, Continuous Collector 55 A
International Rectifier IGBT Transistors Current, Continuous Collector 55 A
Dimensions 15.87 X 5.31 X 20.70 mm
International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm
IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm
International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm
Energy Rating 20 mJ
International Rectifier Energy Rating 20 mJ
IGBT Transistors Energy Rating 20 mJ
International Rectifier IGBT Transistors Energy Rating 20 mJ
Height 0.815" (20.7mm)
International Rectifier Height 0.815" (20.7mm)
IGBT Transistors Height 0.815" (20.7mm)
International Rectifier IGBT Transistors Height 0.815" (20.7mm)
Length 0.625" <5/8> (15.875mm)
International Rectifier Length 0.625" <5/8> (15.875mm)
IGBT Transistors Length 0.625" <5/8> (15.875mm)
International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
IGBT Transistors Mounting Type Through Hole
International Rectifier IGBT Transistors Mounting Type Through Hole
Number of Pins 3
International Rectifier Number of Pins 3
IGBT Transistors Number of Pins 3
International Rectifier IGBT Transistors Number of Pins 3
Package Type TO-247AC
International Rectifier Package Type TO-247AC
IGBT Transistors Package Type TO-247AC
International Rectifier IGBT Transistors Package Type TO-247AC
Polarity N-Channel
International Rectifier Polarity N-Channel
IGBT Transistors Polarity N-Channel
International Rectifier IGBT Transistors Polarity N-Channel
Power Dissipation 200 W
International Rectifier Power Dissipation 200 W
IGBT Transistors Power Dissipation 200 W
International Rectifier IGBT Transistors Power Dissipation 200 W
Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W
IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W
Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
International Rectifier Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
International Rectifier IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
IGBT Transistors Temperature, Operating, Maximum +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
IGBT Transistors Temperature, Operating, Minimum -55 °C
International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
IGBT Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C
Transistor Type NPN
International Rectifier Transistor Type NPN
IGBT Transistors Transistor Type NPN
International Rectifier IGBT Transistors Transistor Type NPN
Type Ultrafast
International Rectifier Type Ultrafast
IGBT Transistors Type Ultrafast
International Rectifier IGBT Transistors Type Ultrafast
Voltage, Collector to Emitter 600 V
International Rectifier Voltage, Collector to Emitter 600 V
IGBT Transistors Voltage, Collector to Emitter 600 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V
Voltage, Collector to Emitter Shorted 600 V
International Rectifier Voltage, Collector to Emitter Shorted 600 V
IGBT Transistors Voltage, Collector to Emitter Shorted 600 V
International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V
Voltage, Gate to Emitter ±20 V
International Rectifier Voltage, Gate to Emitter ±20 V
IGBT Transistors Voltage, Gate to Emitter ±20 V
International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V
Width 0.209" (5.31mm)
International Rectifier Width 0.209" (5.31mm)
IGBT Transistors Width 0.209" (5.31mm)
International Rectifier IGBT Transistors Width 0.209" (5.31mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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