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IRG4PC40UPBF - 

600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE

International Rectifier IRG4PC40UPBF
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制造商產(chǎn)品編號：
IRG4PC40UPBF
倉庫庫存編號：
70017069
技術數(shù)據(jù)表：
View IRG4PC40UPBF Datasheet Datasheet
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IRG4PC40UPBF產(chǎn)品概述

Single IGBT up to 20A, Infineon
optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs

IRG4PC40UPBF產(chǎn)品信息

  Capacitance, Gate  2100 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  40 A  
  Current, Continuous Collector  40 A  
  Dimensions  15.87 X 5.31 X 20.70 mm  
  Energy Rating  15 mJ  
  Height  0.815" (20.7mm)  
  Length  0.625" <5/8> (15.875mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-247AC  
  Polarity  N-Channel  
  Power Dissipation  160 W  
  Resistance, Thermal, Junction to Case  0.77 °C/W  
  Speed, Switching  8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Ultrafast  
  Voltage, Collector to Emitter  600 V  
  Voltage, Collector to Emitter Shorted  600 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.209" (5.31mm)  
關鍵詞         

IRG4PC40UPBF相關搜索

Capacitance, Gate 2100 pF  International Rectifier Capacitance, Gate 2100 pF  IGBT Transistors Capacitance, Gate 2100 pF  International Rectifier IGBT Transistors Capacitance, Gate 2100 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 40 A  International Rectifier Current, Collector 40 A  IGBT Transistors Current, Collector 40 A  International Rectifier IGBT Transistors Current, Collector 40 A   Current, Continuous Collector 40 A  International Rectifier Current, Continuous Collector 40 A  IGBT Transistors Current, Continuous Collector 40 A  International Rectifier IGBT Transistors Current, Continuous Collector 40 A   Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm  IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm   Energy Rating 15 mJ  International Rectifier Energy Rating 15 mJ  IGBT Transistors Energy Rating 15 mJ  International Rectifier IGBT Transistors Energy Rating 15 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 160 W  International Rectifier Power Dissipation 160 W  IGBT Transistors Power Dissipation 160 W  International Rectifier IGBT Transistors Power Dissipation 160 W   Resistance, Thermal, Junction to Case 0.77 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.77 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.77 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.77 °C/W   Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier IGBT Transistors Speed, Switching 8 to 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)  
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