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IRG4BC30UPBF - 

600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE

International Rectifier IRG4BC30UPBF
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制造商產(chǎn)品編號(hào)：
IRG4BC30UPBF
倉(cāng)庫(kù)庫(kù)存編號(hào)：
70017064
技術(shù)數(shù)據(jù)表：
View IRG4BC30UPBF Datasheet Datasheet
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IRG4BC30UPBF產(chǎn)品概述

Single IGBT up to 20A, Infineon
optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs

IRG4BC30UPBF產(chǎn)品信息

  Capacitance, Gate  1100 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  23 A  
  Current, Continuous Collector  23 A  
  Dimensions  10.67 x 4.83 x 16.51 mm  
  Energy Rating  10 mJ  
  Height  0.65" (16.51mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-220AB  
  Polarity  N-Channel  
  Power Dissipation  100 W  
  Resistance, Thermal, Junction to Case  1.2 °C/W  
  Speed, Switching  40 kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Ultrafast  
  Voltage, Collector to Emitter  600 V  
  Voltage, Collector to Emitter Shorted  600 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.19" (4.83mm)  
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IRG4BC30UPBF相關(guān)搜索

Capacitance, Gate 1100 pF  International Rectifier Capacitance, Gate 1100 pF  IGBT Transistors Capacitance, Gate 1100 pF  International Rectifier IGBT Transistors Capacitance, Gate 1100 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 23 A  International Rectifier Current, Collector 23 A  IGBT Transistors Current, Collector 23 A  International Rectifier IGBT Transistors Current, Collector 23 A   Current, Continuous Collector 23 A  International Rectifier Current, Continuous Collector 23 A  IGBT Transistors Current, Continuous Collector 23 A  International Rectifier IGBT Transistors Current, Continuous Collector 23 A   Dimensions 10.67 x 4.83 x 16.51 mm  International Rectifier Dimensions 10.67 x 4.83 x 16.51 mm  IGBT Transistors Dimensions 10.67 x 4.83 x 16.51 mm  International Rectifier IGBT Transistors Dimensions 10.67 x 4.83 x 16.51 mm   Energy Rating 10 mJ  International Rectifier Energy Rating 10 mJ  IGBT Transistors Energy Rating 10 mJ  International Rectifier IGBT Transistors Energy Rating 10 mJ   Height 0.65" (16.51mm)  International Rectifier Height 0.65" (16.51mm)  IGBT Transistors Height 0.65" (16.51mm)  International Rectifier IGBT Transistors Height 0.65" (16.51mm)   Length 0.42" (10.67mm)  International Rectifier Length 0.42" (10.67mm)  IGBT Transistors Length 0.42" (10.67mm)  International Rectifier IGBT Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-220AB  International Rectifier Package Type TO-220AB  IGBT Transistors Package Type TO-220AB  International Rectifier IGBT Transistors Package Type TO-220AB   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 100 W  International Rectifier Power Dissipation 100 W  IGBT Transistors Power Dissipation 100 W  International Rectifier IGBT Transistors Power Dissipation 100 W   Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier Resistance, Thermal, Junction to Case 1.2 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 1.2 °C/W   Speed, Switching 40 kHz  International Rectifier Speed, Switching 40 kHz  IGBT Transistors Speed, Switching 40 kHz  International Rectifier IGBT Transistors Speed, Switching 40 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.19" (4.83mm)  International Rectifier Width 0.19" (4.83mm)  IGBT Transistors Width 0.19" (4.83mm)  International Rectifier IGBT Transistors Width 0.19" (4.83mm)  
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