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IRFR3910TRLPBF - 

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.115Ohm; ID 16A; D-Pak (TO-252AA); PD 79W

International Rectifier IRFR3910TRLPBF
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制造商產(chǎn)品編號：
IRFR3910TRLPBF
倉庫庫存編號：
70017774
技術(shù)數(shù)據(jù)表：
View IRFR3910TRLPBF Datasheet Datasheet
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IRFR3910TRLPBF產(chǎn)品概述

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features:
  • Ultra Low On-Resistance
  • Surface Mount (IRFR3910)
  • Straight Lead (IRFU3910)
  • Advanced Process Technology
  • Fast Switching
  • Fully Avalanche Rated

    • IRFR3910TRLPBF產(chǎn)品信息

      Brand/Series  HEXFET Series  
      Capacitance, Input  640 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Dual Drain  
      Current, Drain  16 A  
      Dimensions  6.73 x 6.22 x 2.39 mm  
      Gate Charge, Total  44 nC  
      Height  0.094" (2.39mm)  
      Length  0.264" (6.73mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  DPAK  
      Polarization  N-Channel  
      Power Dissipation  79 W  
      Resistance, Drain to Source On  0.115 Ω  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Time, Turn-Off Delay  37 ns  
      Time, Turn-On Delay  6.4 ns  
      Transconductance, Forward  6.4 S  
      Typical Gate Charge @ Vgs  Maximum of 44 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  100 V  
      Voltage, Drain to Source  100 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.245" (6.22mm)  
    關(guān)鍵詞         

    IRFR3910TRLPBF相關(guān)搜索

    Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 640 pF @ 25 V  International Rectifier Capacitance, Input 640 pF @ 25 V  MOSFET Transistors Capacitance, Input 640 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 640 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Dual Drain  International Rectifier Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  International Rectifier MOSFET Transistors Configuration Dual Drain   Current, Drain 16 A  International Rectifier Current, Drain 16 A  MOSFET Transistors Current, Drain 16 A  International Rectifier MOSFET Transistors Current, Drain 16 A   Dimensions 6.73 x 6.22 x 2.39 mm  International Rectifier Dimensions 6.73 x 6.22 x 2.39 mm  MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm  International Rectifier MOSFET Transistors Dimensions 6.73 x 6.22 x 2.39 mm   Gate Charge, Total 44 nC  International Rectifier Gate Charge, Total 44 nC  MOSFET Transistors Gate Charge, Total 44 nC  International Rectifier MOSFET Transistors Gate Charge, Total 44 nC   Height 0.094" (2.39mm)  International Rectifier Height 0.094" (2.39mm)  MOSFET Transistors Height 0.094" (2.39mm)  International Rectifier MOSFET Transistors Height 0.094" (2.39mm)   Length 0.264" (6.73mm)  International Rectifier Length 0.264" (6.73mm)  MOSFET Transistors Length 0.264" (6.73mm)  International Rectifier MOSFET Transistors Length 0.264" (6.73mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type DPAK  International Rectifier Package Type DPAK  MOSFET Transistors Package Type DPAK  International Rectifier MOSFET Transistors Package Type DPAK   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 79 W  International Rectifier Power Dissipation 79 W  MOSFET Transistors Power Dissipation 79 W  International Rectifier MOSFET Transistors Power Dissipation 79 W   Resistance, Drain to Source On 0.115 Ω  International Rectifier Resistance, Drain to Source On 0.115 Ω  MOSFET Transistors Resistance, Drain to Source On 0.115 Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.115 Ω   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 37 ns  International Rectifier Time, Turn-Off Delay 37 ns  MOSFET Transistors Time, Turn-Off Delay 37 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 37 ns   Time, Turn-On Delay 6.4 ns  International Rectifier Time, Turn-On Delay 6.4 ns  MOSFET Transistors Time, Turn-On Delay 6.4 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 6.4 ns   Transconductance, Forward 6.4 S  International Rectifier Transconductance, Forward 6.4 S  MOSFET Transistors Transconductance, Forward 6.4 S  International Rectifier MOSFET Transistors Transconductance, Forward 6.4 S   Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 44 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  International Rectifier Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  International Rectifier Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.245" (6.22mm)  International Rectifier Width 0.245" (6.22mm)  MOSFET Transistors Width 0.245" (6.22mm)  International Rectifier MOSFET Transistors Width 0.245" (6.22mm)  
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