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IRFL024NPBF
IRFL024NPBF -
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.075Ohm; ID 2.8A; SOT-223; PD 1W; VGS +/-20V
聲明:圖片僅供參考,請以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號:
IRFL024NPBF
倉庫庫存編號:
70017598
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRFL024NPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRFL024NPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
400 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Dual Drain
Current, Drain
4 A
Dimensions
6.70 x 3.70 x 1.45 mm
Gate Charge, Total
18.3 nC
Height
0.057" (1.45mm)
Length
0.263" (6.7mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
SOT-223
Polarization
N-Channel
Power Dissipation
2.1 W
Resistance, Drain to Source On
0.075 Ω
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
22.2 ns
Time, Turn-On Delay
8.1 ns
Transconductance, Forward
3 S
Typical Gate Charge @ Vgs
Maximum of 18.3 nC @ 10 V
Voltage, Breakdown, Drain to Source
55 V
Voltage, Drain to Source
55 V
Voltage, Forward, Diode
1 V
Voltage, Gate to Source
±20 V
Width
0.146" (3.7mm)
關(guān)鍵詞
IRFL024NPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號 / 倉庫庫存編號
PDF
操作
IRFL024NPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 400 pF @ 25 V
International Rectifier Capacitance, Input 400 pF @ 25 V
MOSFET Transistors Capacitance, Input 400 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 400 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Dual Drain
International Rectifier Configuration Dual Drain
MOSFET Transistors Configuration Dual Drain
International Rectifier MOSFET Transistors Configuration Dual Drain
Current, Drain 4 A
International Rectifier Current, Drain 4 A
MOSFET Transistors Current, Drain 4 A
International Rectifier MOSFET Transistors Current, Drain 4 A
Dimensions 6.70 x 3.70 x 1.45 mm
International Rectifier Dimensions 6.70 x 3.70 x 1.45 mm
MOSFET Transistors Dimensions 6.70 x 3.70 x 1.45 mm
International Rectifier MOSFET Transistors Dimensions 6.70 x 3.70 x 1.45 mm
Gate Charge, Total 18.3 nC
International Rectifier Gate Charge, Total 18.3 nC
MOSFET Transistors Gate Charge, Total 18.3 nC
International Rectifier MOSFET Transistors Gate Charge, Total 18.3 nC
Height 0.057" (1.45mm)
International Rectifier Height 0.057" (1.45mm)
MOSFET Transistors Height 0.057" (1.45mm)
International Rectifier MOSFET Transistors Height 0.057" (1.45mm)
Length 0.263" (6.7mm)
International Rectifier Length 0.263" (6.7mm)
MOSFET Transistors Length 0.263" (6.7mm)
International Rectifier MOSFET Transistors Length 0.263" (6.7mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type SOT-223
International Rectifier Package Type SOT-223
MOSFET Transistors Package Type SOT-223
International Rectifier MOSFET Transistors Package Type SOT-223
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 2.1 W
International Rectifier Power Dissipation 2.1 W
MOSFET Transistors Power Dissipation 2.1 W
International Rectifier MOSFET Transistors Power Dissipation 2.1 W
Resistance, Drain to Source On 0.075 Ω
International Rectifier Resistance, Drain to Source On 0.075 Ω
MOSFET Transistors Resistance, Drain to Source On 0.075 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.075 Ω
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 22.2 ns
International Rectifier Time, Turn-Off Delay 22.2 ns
MOSFET Transistors Time, Turn-Off Delay 22.2 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 22.2 ns
Time, Turn-On Delay 8.1 ns
International Rectifier Time, Turn-On Delay 8.1 ns
MOSFET Transistors Time, Turn-On Delay 8.1 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 8.1 ns
Transconductance, Forward 3 S
International Rectifier Transconductance, Forward 3 S
MOSFET Transistors Transconductance, Forward 3 S
International Rectifier MOSFET Transistors Transconductance, Forward 3 S
Typical Gate Charge @ Vgs Maximum of 18.3 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs Maximum of 18.3 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 18.3 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 18.3 nC @ 10 V
Voltage, Breakdown, Drain to Source 55 V
International Rectifier Voltage, Breakdown, Drain to Source 55 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V
Voltage, Drain to Source 55 V
International Rectifier Voltage, Drain to Source 55 V
MOSFET Transistors Voltage, Drain to Source 55 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V
Voltage, Forward, Diode 1 V
International Rectifier Voltage, Forward, Diode 1 V
MOSFET Transistors Voltage, Forward, Diode 1 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.146" (3.7mm)
International Rectifier Width 0.146" (3.7mm)
MOSFET Transistors Width 0.146" (3.7mm)
International Rectifier MOSFET Transistors Width 0.146" (3.7mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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