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IRFB3077PBF
IRFB3077PBF -
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 2.8Milliohms; ID 210A; TO-220AB; PD 370W; -55de
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRFB3077PBF
倉(cāng)庫(kù)庫(kù)存編號(hào):
70017159
技術(shù)數(shù)據(jù)表:
Datasheet
訂購(gòu)熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷(xiāo)售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!
IRFB3077PBF產(chǎn)品信息
Brand/Series
HEXFET Series
Channel Type
N
Configuration
Single
Current, Drain
210 A
Dimensions
10.67 x 4.83 x 16.51
Gate Charge, Total
160 nC
Length
0.42" (10.67mm)
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
370
Temperature, Operating, Maximum
+175 °C
Time, Turn-On Delay
25 ns
Transconductance, Forward
160 sec
Typical Gate Charge @ Vgs
160 nC @ 10 V
Voltage, Breakdown, Drain to Source
75 V
Voltage, Drain to Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±20 V
關(guān)鍵詞
IRFB3077PBF客戶(hù)還搜索了
參考圖片
制造商 / 說(shuō)明 / 型號(hào) / 倉(cāng)庫(kù)庫(kù)存編號(hào)
PDF
操作
Microchip Technology Inc.
Microchip TC7662ACPA, Charge Pump Inverting, -18 - -3 V, 8-Pin, PDIP
型號(hào):
TC7662ACPA
倉(cāng)庫(kù)庫(kù)存編號(hào):
70045793
搜索
IRFB3077PBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 210 A
International Rectifier Current, Drain 210 A
MOSFET Transistors Current, Drain 210 A
International Rectifier MOSFET Transistors Current, Drain 210 A
Dimensions 10.67 x 4.83 x 16.51
International Rectifier Dimensions 10.67 x 4.83 x 16.51
MOSFET Transistors Dimensions 10.67 x 4.83 x 16.51
International Rectifier MOSFET Transistors Dimensions 10.67 x 4.83 x 16.51
Gate Charge, Total 160 nC
International Rectifier Gate Charge, Total 160 nC
MOSFET Transistors Gate Charge, Total 160 nC
International Rectifier MOSFET Transistors Gate Charge, Total 160 nC
Length 0.42" (10.67mm)
International Rectifier Length 0.42" (10.67mm)
MOSFET Transistors Length 0.42" (10.67mm)
International Rectifier MOSFET Transistors Length 0.42" (10.67mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
MOSFET Transistors Mounting Type Through Hole
International Rectifier MOSFET Transistors Mounting Type Through Hole
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type TO-220AB
International Rectifier Package Type TO-220AB
MOSFET Transistors Package Type TO-220AB
International Rectifier MOSFET Transistors Package Type TO-220AB
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 370
International Rectifier Power Dissipation 370
MOSFET Transistors Power Dissipation 370
International Rectifier MOSFET Transistors Power Dissipation 370
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Time, Turn-On Delay 25 ns
International Rectifier Time, Turn-On Delay 25 ns
MOSFET Transistors Time, Turn-On Delay 25 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 25 ns
Transconductance, Forward 160 sec
International Rectifier Transconductance, Forward 160 sec
MOSFET Transistors Transconductance, Forward 160 sec
International Rectifier MOSFET Transistors Transconductance, Forward 160 sec
Typical Gate Charge @ Vgs 160 nC @ 10 V
International Rectifier Typical Gate Charge @ Vgs 160 nC @ 10 V
MOSFET Transistors Typical Gate Charge @ Vgs 160 nC @ 10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 160 nC @ 10 V
Voltage, Breakdown, Drain to Source 75 V
International Rectifier Voltage, Breakdown, Drain to Source 75 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 75 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 75 V
Voltage, Drain to Source 75 V
International Rectifier Voltage, Drain to Source 75 V
MOSFET Transistors Voltage, Drain to Source 75 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 75 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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