amphenol代理商
專業(yè)銷售Amphenol（安費諾）全系列產(chǎn)品-英國2號倉庫
美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

在本站結(jié)果里搜索：    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

IRF7853PBF - 

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 14.4 Milliohms; ID 8.3A; SO-8; PD 2.5W; gFS 11S

International Rectifier IRF7853PBF
聲明：圖片僅供參考，請以實物為準！
制造商產(chǎn)品編號：
IRF7853PBF
倉庫庫存編號：
70017361
技術(shù)數(shù)據(jù)表：
View IRF7853PBF Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

IRF7853PBF產(chǎn)品概述

"The IRF7853PbF is designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications.

The 100V IRF7853 is also optimized for wide-range communication bus input (36V to 75V) primary-side bridge topologies in isolated DC-DC bus converters. The 80V IRF7854 is useful for active ORing and hot-swap applications. All three of the MOSFETs are designed for secondary-side synchronous rectification in 5-19Vout flyback converter and resonant half-bridge applications and are suitable for isolated DC-DC applications as primary-side switches in forward or push-pull topologies for 18-36Vin isolated DC-DC converters.

Together with IRs low-voltage MOSFETs and controller ICs, these mid-range MOSFETs form secondary-side chipsets for medium-power, converter applications. In addition, when combined with the SmartRectifierTM IR1167 in AC-DC power supplies such as laptop adaptors, for example, these new SO-8 devices can replace two of their large TO-220 MOSFET counterparts and their associated heatsinks, improving overall system efficiency by as much as 1%. "
"Applications
  • Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters
  • Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
  • Secondary Side Synchronous Rectification Switch for 15Vout
  • Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications

    Benefits
  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
  • Fully Characterized Avalanche Voltage"

    • IRF7853PBF產(chǎn)品信息

      Brand/Series  HEXFET Series  
      Capacitance, Input  1640 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Quad Drain, Triple Source  
      Current, Drain  8.3 A  
      Dimensions  5.00 x 4.00 x 1.50 mm  
      Gate Charge, Total  28 nC  
      Height  0.059" (1.5mm)  
      Length  0.196" (5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  8  
      Package Type  SO-8  
      Polarization  N-Channel  
      Power Dissipation  2.5 W  
      Resistance, Drain to Source On  18 mΩ  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  26 ns  
      Time, Turn-On Delay  13 ns  
      Transconductance, Forward  11 S  
      Typical Gate Charge @ Vgs  28 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  100 V  
      Voltage, Drain to Source  100 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.157" (4mm)  
    關(guān)鍵詞         

    IRF7853PBF相關(guān)搜索

    Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 1640 pF @ 25 V  International Rectifier Capacitance, Input 1640 pF @ 25 V  MOSFET Transistors Capacitance, Input 1640 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 1640 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Quad Drain, Triple Source  International Rectifier Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  International Rectifier MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain 8.3 A  International Rectifier Current, Drain 8.3 A  MOSFET Transistors Current, Drain 8.3 A  International Rectifier MOSFET Transistors Current, Drain 8.3 A   Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm  MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm   Gate Charge, Total 28 nC  International Rectifier Gate Charge, Total 28 nC  MOSFET Transistors Gate Charge, Total 28 nC  International Rectifier MOSFET Transistors Gate Charge, Total 28 nC   Height 0.059" (1.5mm)  International Rectifier Height 0.059" (1.5mm)  MOSFET Transistors Height 0.059" (1.5mm)  International Rectifier MOSFET Transistors Height 0.059" (1.5mm)   Length 0.196" (5mm)  International Rectifier Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  International Rectifier MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  International Rectifier Number of Pins 8  MOSFET Transistors Number of Pins 8  International Rectifier MOSFET Transistors Number of Pins 8   Package Type SO-8  International Rectifier Package Type SO-8  MOSFET Transistors Package Type SO-8  International Rectifier MOSFET Transistors Package Type SO-8   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 2.5 W  International Rectifier Power Dissipation 2.5 W  MOSFET Transistors Power Dissipation 2.5 W  International Rectifier MOSFET Transistors Power Dissipation 2.5 W   Resistance, Drain to Source On 18 mΩ  International Rectifier Resistance, Drain to Source On 18 mΩ  MOSFET Transistors Resistance, Drain to Source On 18 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 18 mΩ   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 26 ns  International Rectifier Time, Turn-Off Delay 26 ns  MOSFET Transistors Time, Turn-Off Delay 26 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 26 ns   Time, Turn-On Delay 13 ns  International Rectifier Time, Turn-On Delay 13 ns  MOSFET Transistors Time, Turn-On Delay 13 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 13 ns   Transconductance, Forward 11 S  International Rectifier Transconductance, Forward 11 S  MOSFET Transistors Transconductance, Forward 11 S  International Rectifier MOSFET Transistors Transconductance, Forward 11 S   Typical Gate Charge @ Vgs 28 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs 28 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 28 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 28 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  International Rectifier Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  International Rectifier Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  International Rectifier Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  International Rectifier MOSFET Transistors Width 0.157" (4mm)  
    電話:400-900-3095
    QQ:800152669
    關(guān)于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們
    Copyright © 2017 habitrun.com All Rights Reserved. 技術(shù)支持：電子元器件 ICP備案證書號:粵ICP備11103613號