1MBK50D-060S - 

Capacitance, Gate 2500 pF  Fuji Semiconductor Capacitance, Gate 2500 pF  IGBT Transistor Modules Capacitance, Gate 2500 pF  Fuji Semiconductor IGBT Transistor Modules Capacitance, Gate 2500 pF   Channel Type N  Fuji Semiconductor Channel Type N  IGBT Transistor Modules Channel Type N  Fuji Semiconductor IGBT Transistor Modules Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  IGBT Transistor Modules Configuration Single  Fuji Semiconductor IGBT Transistor Modules Configuration Single   Current, Collector 65 A  Fuji Semiconductor Current, Collector 65 A  IGBT Transistor Modules Current, Collector 65 A  Fuji Semiconductor IGBT Transistor Modules Current, Collector 65 A   Current, Continuous Collector 65 A  Fuji Semiconductor Current, Continuous Collector 65 A  IGBT Transistor Modules Current, Continuous Collector 65 A  Fuji Semiconductor IGBT Transistor Modules Current, Continuous Collector 65 A   Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor Dimensions 15.5 x 5 x 21.5 mm  IGBT Transistor Modules Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor IGBT Transistor Modules Dimensions 15.5 x 5 x 21.5 mm   Height 0.846" (21.5mm)  Fuji Semiconductor Height 0.846" (21.5mm)  IGBT Transistor Modules Height 0.846" (21.5mm)  Fuji Semiconductor IGBT Transistor Modules Height 0.846" (21.5mm)   Length 0.61" (15.5mm)  Fuji Semiconductor Length 0.61" (15.5mm)  IGBT Transistor Modules Length 0.61" (15.5mm)  Fuji Semiconductor IGBT Transistor Modules Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  IGBT Transistor Modules Mounting Type Through Hole  Fuji Semiconductor IGBT Transistor Modules Mounting Type Through Hole   Number of Pins 3  Fuji Semiconductor Number of Pins 3  IGBT Transistor Modules Number of Pins 3  Fuji Semiconductor IGBT Transistor Modules Number of Pins 3   Package Type TO-247  Fuji Semiconductor Package Type TO-247  IGBT Transistor Modules Package Type TO-247  Fuji Semiconductor IGBT Transistor Modules Package Type TO-247   Polarity N-Channel  Fuji Semiconductor Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  Fuji Semiconductor IGBT Transistor Modules Polarity N-Channel   Power Dissipation 200 W  Fuji Semiconductor Power Dissipation 200 W  IGBT Transistor Modules Power Dissipation 200 W  Fuji Semiconductor IGBT Transistor Modules Power Dissipation 200 W   Primary Type Si  Fuji Semiconductor Primary Type Si  IGBT Transistor Modules Primary Type Si  Fuji Semiconductor IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.63 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.63 °C/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.63 °C/W  Fuji Semiconductor IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.63 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  Fuji Semiconductor Temperature, Operating, Range Maximum of +150 °C  IGBT Transistor Modules Temperature, Operating, Range Maximum of +150 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Range Maximum of +150 °C   Type Switching  Fuji Semiconductor Type Switching  IGBT Transistor Modules Type Switching  Fuji Semiconductor IGBT Transistor Modules Type Switching   Voltage, Collector to Emitter 600 V  Fuji Semiconductor Voltage, Collector to Emitter 600 V  IGBT Transistor Modules Voltage, Collector to Emitter 600 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  Fuji Semiconductor Voltage, Collector to Emitter Shorted 600 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  Fuji Semiconductor Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  IGBT Transistor Modules Width 0.197" (5mm)  Fuji Semiconductor IGBT Transistor Modules Width 0.197" (5mm)