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1MBH50D-060S - 

IGBT; IGBT+FWD; Molded; TO-3PL Case; 75A Collector; 230 W (Max.); 600V; +/-20V

Fuji Semiconductor 1MBH50D-060S
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制造商產(chǎn)品編號(hào):
1MBH50D-060S
倉(cāng)庫(kù)庫(kù)存編號(hào):
70212527
技術(shù)數(shù)據(jù)表:
View 1MBH50D-060S Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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1MBH50D-060S產(chǎn)品概述


  • Devices Also Available without Free-Wheeling Diode
  • 1MBH50D-060S產(chǎn)品信息

      Capacitance, Gate  2500 pF  
      Channel Type  N  
      Configuration  Single  
      Current, Collector  75 A  
      Current, Continuous Collector  75 A  
      Dimensions  20.5 x 5 x 26 mm  
      Height  1.024" (26mm)  
      Length  0.807" (20.5mm)  
      Mounting Type  Through Hole  
      Number of Pins  3  
      Package Type  TO-3PL  
      Polarity  N-Channel  
      Power Dissipation  230 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  0.54 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Range  Maximum of +150 °C  
      Type  Switching  
      Voltage, Collector to Emitter  600 V  
      Voltage, Collector to Emitter Shorted  600 V  
      Voltage, Gate to Emitter  ±20 V  
      Width  0.197" (5mm)  
    關(guān)鍵詞         

    1MBH50D-060S相關(guān)搜索

    Capacitance, Gate 2500 pF  Fuji Semiconductor Capacitance, Gate 2500 pF  IGBT Transistor Modules Capacitance, Gate 2500 pF  Fuji Semiconductor IGBT Transistor Modules Capacitance, Gate 2500 pF   Channel Type N  Fuji Semiconductor Channel Type N  IGBT Transistor Modules Channel Type N  Fuji Semiconductor IGBT Transistor Modules Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  IGBT Transistor Modules Configuration Single  Fuji Semiconductor IGBT Transistor Modules Configuration Single   Current, Collector 75 A  Fuji Semiconductor Current, Collector 75 A  IGBT Transistor Modules Current, Collector 75 A  Fuji Semiconductor IGBT Transistor Modules Current, Collector 75 A   Current, Continuous Collector 75 A  Fuji Semiconductor Current, Continuous Collector 75 A  IGBT Transistor Modules Current, Continuous Collector 75 A  Fuji Semiconductor IGBT Transistor Modules Current, Continuous Collector 75 A   Dimensions 20.5 x 5 x 26 mm  Fuji Semiconductor Dimensions 20.5 x 5 x 26 mm  IGBT Transistor Modules Dimensions 20.5 x 5 x 26 mm  Fuji Semiconductor IGBT Transistor Modules Dimensions 20.5 x 5 x 26 mm   Height 1.024" (26mm)  Fuji Semiconductor Height 1.024" (26mm)  IGBT Transistor Modules Height 1.024" (26mm)  Fuji Semiconductor IGBT Transistor Modules Height 1.024" (26mm)   Length 0.807" (20.5mm)  Fuji Semiconductor Length 0.807" (20.5mm)  IGBT Transistor Modules Length 0.807" (20.5mm)  Fuji Semiconductor IGBT Transistor Modules Length 0.807" (20.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  IGBT Transistor Modules Mounting Type Through Hole  Fuji Semiconductor IGBT Transistor Modules Mounting Type Through Hole   Number of Pins 3  Fuji Semiconductor Number of Pins 3  IGBT Transistor Modules Number of Pins 3  Fuji Semiconductor IGBT Transistor Modules Number of Pins 3   Package Type TO-3PL  Fuji Semiconductor Package Type TO-3PL  IGBT Transistor Modules Package Type TO-3PL  Fuji Semiconductor IGBT Transistor Modules Package Type TO-3PL   Polarity N-Channel  Fuji Semiconductor Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  Fuji Semiconductor IGBT Transistor Modules Polarity N-Channel   Power Dissipation 230 W  Fuji Semiconductor Power Dissipation 230 W  IGBT Transistor Modules Power Dissipation 230 W  Fuji Semiconductor IGBT Transistor Modules Power Dissipation 230 W   Primary Type Si  Fuji Semiconductor Primary Type Si  IGBT Transistor Modules Primary Type Si  Fuji Semiconductor IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.54 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.54 °C/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.54 °C/W  Fuji Semiconductor IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.54 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  Fuji Semiconductor Temperature, Operating, Range Maximum of +150 °C  IGBT Transistor Modules Temperature, Operating, Range Maximum of +150 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Range Maximum of +150 °C   Type Switching  Fuji Semiconductor Type Switching  IGBT Transistor Modules Type Switching  Fuji Semiconductor IGBT Transistor Modules Type Switching   Voltage, Collector to Emitter 600 V  Fuji Semiconductor Voltage, Collector to Emitter 600 V  IGBT Transistor Modules Voltage, Collector to Emitter 600 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  Fuji Semiconductor Voltage, Collector to Emitter Shorted 600 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  Fuji Semiconductor Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  IGBT Transistor Modules Width 0.197" (5mm)  Fuji Semiconductor IGBT Transistor Modules Width 0.197" (5mm)  
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